K4A4G085WD vs K4A4G085WG-BCWE Comparación
Comparación detallada lado a lado de K4A4G085WD por Samsung Electronics y K4A4G085WG-BCWE por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | K4A4G085WD | K4A4G085WG-BCWE |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,05 | $2,68 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM (Volatile) |
| Die Generation | D-die | — |
| Density | 4 Gb | — |
| Organización de memoria | 512M x 8 | — |
| Velocidad de datos | Up to 2400 Mbps (speed-grade dependent) | 3200 Mbps/pin |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Encapsulado | 78-ball FBGA | FBGA-78 (BCW) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Speed Grade (example) | -BCPB (DDR4-2400), -BCRC | — |
| Tipo de interfaz | DDR4 (double data rate, source-synchronous) | — |
| Bank Group Architecture | Yes (DDR4 bank groups) | — |
| ODT | On-Die Termination (built-in) | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| CAS Latency (typical) | [DATA_NEEDED: CL per speed grade] | — |
| Refresh | [DATA_NEEDED: refresh interval] | [DATA_NEEDED: refresh rate specification] |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Tamaño de memoria | — | 4 Gb |
| Memory Organization | — | 512M x 8 |
| Speed Class | — | DDR4-3200 |
| Technology | — | D-die DDR4 |
| Interfaz | — | Parallel (DDR4) |
| Burst Length | — | BL8 |
| DLL Mode | — | DLL Enabled (per datasheet timing) |
| Packaging | — | Tray |