K4A8G165WB-BCPB vs K4AAG165WA-BCPB Vergleich
Detaillierter Direktvergleich von K4A8G165WB-BCPB von Samsung Electronics und K4AAG165WA-BCPB von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K4AAG165WA-BCPB - 16Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4AAG165WA-BCPB ✓ AktivSpezifikationsvergleich
| Parameter | K4A8G165WB-BCPB | K4AAG165WA-BCPB |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,30 | $63,79 |
| Density | 8 Gb | 16 Gb |
| Speicherorganisation | 512M x 16 | 1G x 16 |
| Speed Grade | 2133 Mbps (PC4-17000) | — |
| Versorgungsspannung | 1.2 V (1.14 V to 1.26 V) | — |
| Betriebstemperatur | 0°C to 85°C | [DATA_NEEDED: operating temperature for BCPB grade] |
| Gehäuse | 96-ball FBGA (TFBGA-96) | FBGA-96 |
| Burst Length | 8 (BL8) | — |
| Burst Type | Sequential and Interleave | — |
| CAS-Latenz | Programmable (e.g., 15, 16, 18) | — |
| Refresh | Auto and Self Refresh | — |
| Number of Terminals | 96 | — |
| Package Code | TFBGA | — |
| Package Shape | RECTANGULAR | — |
| Terminal Position | BOTTOM | — |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Speichertyp | — | Volatile DRAM (DDR4 SDRAM) |
| Technology | — | DDR4 |
| Datenrate | — | 3200 Mbps |
| Supply Voltage (VDD) | — | 1.2 V |
| Interface Voltage (VDDQ) | — | 1.2 V |
| Montageart | — | Surface Mount |
| Memory Format | — | DRAM |
| Packaging | — | Tray |
| Product Status | — | Active |
| Power Consumption | — | 25% lower than DDR3 (per Samsung DDR4 family) |
| Bank Group Architecture | — | Yes (DDR4 internal bank groups) |
| On-Die Termination (ODT) | — | Yes |
| Max Capacity Family | — | Up to 32GB component (Samsung DDR4 family) |