K4A8G165WB-BCPB vs K4AAG165WA-BCPB 对比
详细并排对比 K4A8G165WB-BCPB 出自 Samsung Electronics 和 K4AAG165WA-BCPB 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G165WB-BCPB | K4AAG165WA-BCPB |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.30 | $63.79 |
| Density | 8 Gb | 16 Gb |
| 存储组织 | 512M x 16 | 1G x 16 |
| Speed Grade | 2133 Mbps (PC4-17000) | — |
| 电源电压 | 1.2 V (1.14 V to 1.26 V) | — |
| 工作温度 | 0°C to 85°C | [DATA_NEEDED: operating temperature for BCPB grade] |
| 封装 | 96-ball FBGA (TFBGA-96) | FBGA-96 |
| Burst Length | 8 (BL8) | — |
| Burst Type | Sequential and Interleave | — |
| CAS 延迟 | Programmable (e.g., 15, 16, 18) | — |
| Refresh | Auto and Self Refresh | — |
| Number of Terminals | 96 | — |
| Package Code | TFBGA | — |
| Package Shape | RECTANGULAR | — |
| Terminal Position | BOTTOM | — |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS status] |
| 存储器类型 | — | Volatile DRAM (DDR4 SDRAM) |
| Technology | — | DDR4 |
| 数据速率 | — | 3200 Mbps |
| Supply Voltage (VDD) | — | 1.2 V |
| Interface Voltage (VDDQ) | — | 1.2 V |
| 安装类型 | — | Surface Mount |
| Memory Format | — | DRAM |
| Packaging | — | Tray |
| Product Status | — | Active |
| Power Consumption | — | 25% lower than DDR3 (per Samsung DDR4 family) |
| Bank Group Architecture | — | Yes (DDR4 internal bank groups) |
| On-Die Termination (ODT) | — | Yes |
| Max Capacity Family | — | Up to 32GB component (Samsung DDR4 family) |