K4A8G165WB-BCPB vs MT40A256M16GE-075E:B Vergleich
Detaillierter Direktvergleich von K4A8G165WB-BCPB von Samsung Electronics und MT40A256M16GE-075E:B von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron
MT40A256M16GE-075E:B ✓ AktivSpezifikationsvergleich
| Parameter | K4A8G165WB-BCPB | MT40A256M16GE-075E:B |
|---|---|---|
| Marke | Samsung Electronics | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,30 | $3,95 |
| Density | 8 Gb | — |
| Speicherorganisation | 512M x 16 | 256M x 16 |
| Speed Grade | 2133 Mbps (PC4-17000) | — |
| Versorgungsspannung | 1.2 V (1.14 V to 1.26 V) | — |
| Betriebstemperatur | 0°C to 85°C | [DATA_NEEDED: operating temperature range for standard grade] |
| Gehäuse | 96-ball FBGA (TFBGA-96) | 96-FBGA (9 x 14 mm) |
| Burst Length | 8 (BL8) | — |
| Burst Type | Sequential and Interleave | — |
| CAS-Latenz | Programmable (e.g., 15, 16, 18) | — |
| Refresh | Auto and Self Refresh | 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C |
| Number of Terminals | 96 | — |
| Package Code | TFBGA | — |
| Package Shape | RECTANGULAR | — |
| Terminal Position | BOTTOM | — |
| RoHS-Status | Compliant | — |
| Speichertyp | — | DDR4 SDRAM |
| Speichergröße | — | 4 Gbit |
| Memory Interface | — | Parallel |
| Clock Frequency | — | 1.33 GHz |
| Datenrate | — | 2666 MT/s (DDR4-2666) |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP | — | 2.5 V, -125 mV/+250 mV |
| Internal Banks | — | 16 |
| I/O Type | — | 1.2 V pseudo open-drain |
| VREFDQ | — | On-die, internal, adjustable generation |
| Special Features | — | Temperature controlled refresh (TCR) |
| Montageart | — | Surface Mount |
| Access Time | — | [DATA_NEEDED: CAS latency / access time] |