K4A8G165WB-BCPB vs MT40A256M16GE-075E:B Comparison

Detailed side-by-side comparison of K4A8G165WB-BCPB by Samsung Electronics and MT40A256M16GE-075E:B by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4A8G165WB-BCPB K4A8G165WB-BCPB - 8Gb DDR4 SDRAM x16 2133Mbps | Samsung

K4A8G165WB-BCPB - 8Gb DDR4 SDRAM x16 2133Mbps | Samsung

K4A8G165WB-BCPB ✓ Active
Micron Technology
MT40A256M16GE-075E:B MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron

MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron

MT40A256M16GE-075E:B ✓ Active

Specification Comparison

Parameter K4A8G165WB-BCPB MT40A256M16GE-075E:B
Brand Samsung Electronics Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.30 $3.95
Density 8 Gb —
Organization 512M x 16 256M x 16
Speed Grade 2133 Mbps (PC4-17000) —
Supply Voltage 1.2 V (1.14 V to 1.26 V) —
Operating Temperature 0°C to 85°C [DATA_NEEDED: operating temperature range for standard grade]
Package 96-ball FBGA (TFBGA-96) 96-FBGA (9 x 14 mm)
Burst Length 8 (BL8) —
Burst Type Sequential and Interleave —
CAS Latency Programmable (e.g., 15, 16, 18) —
Refresh Auto and Self Refresh 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C
Number of Terminals 96 —
Package Code TFBGA —
Package Shape RECTANGULAR —
Terminal Position BOTTOM —
RoHS Status Compliant —
Memory Type — DDR4 SDRAM
Memory Size — 4 Gbit
Memory Interface — Parallel
Clock Frequency — 1.33 GHz
Data Rate — 2666 MT/s (DDR4-2666)
VDD / VDDQ — 1.2 V +/-60 mV
VPP — 2.5 V, -125 mV/+250 mV
Internal Banks — 16
I/O Type — 1.2 V pseudo open-drain
VREFDQ — On-die, internal, adjustable generation
Special Features — Temperature controlled refresh (TCR)
Mounting Type — Surface Mount
Access Time — [DATA_NEEDED: CAS latency / access time]

Datasheets & Resources

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