K9ADGD8S0A vs K9DVGY8J5M Vergleich

Detaillierter Direktvergleich von K9ADGD8S0A von Samsung Electronics und K9DVGY8J5M von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Samsung Electronics
K9ADGD8S0A K9ADGD8S0A - 3D V-NAND TCAT Flash Memory Die | Samsung

K9ADGD8S0A - 3D V-NAND TCAT Flash Memory Die | Samsung

K9ADGD8S0A ✗ Abgekündigt
Samsung Electronics
K9DVGY8J5M K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M ✓ Aktiv

Spezifikationsvergleich

Parameter K9ADGD8S0A K9DVGY8J5M
Marke Samsung Electronics Samsung Electronics
Kategorie EEPROM Memory ICs
Lebenszyklusstatus Ende des Lebenszyklus Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,00 $1,00
Device Type 3D V-NAND flash memory bare die —
Process Technology Terabit Cell Array Transistor (TCAT) —
Architecture 3D vertical NAND (V-NAND) —
Form Factor Bare die (unpackaged) —
Found In Samsung K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages —
Known Application Samsung 850 Pro 128 GB SSD —
Memory Class Non-volatile NAND flash —
Manufacturer Samsung Electronics Samsung Electronics
Documented By TechInsights report SAR-1407-802 —
Capacity [DATA_NEEDED: die capacity] —
Versorgungsspannung [DATA_NEEDED: supply voltage] —
Schnittstelle [DATA_NEEDED: interface type] —
Page Size [DATA_NEEDED: page size] —
Program/Erase Cycles [DATA_NEEDED: endurance] —
Betriebstemperatur [DATA_NEEDED: operating temperature] [DATA_NEEDED: operating temperature range]
Gehäuse [DATA_NEEDED: package] —
Product Type — Raw NAND Flash Memory
NAND Technology — Samsung V-NAND (3D TLC)
Flash ID — EC519A3F8CCB
Density — [DATA_NEEDED: die density (Gb)]
Organization (Page/Block) — [DATA_NEEDED: page and block organization]
Schnittstellentyp — [DATA_NEEDED: interface (toggle DDR / async)]
Supply Voltage (VCC) — [DATA_NEEDED: VCC voltage]
Supply Voltage (VCCQ) — [DATA_NEEDED: VCCQ voltage]
Program Page Time (tPROG) — [DATA_NEEDED: tPROG typical/us]
Block Erase Time (tBERS) — [DATA_NEEDED: tBERS typical/us]
Read Time (tR) — [DATA_NEEDED: tR typical/us]
Program/Erase Endurance — [DATA_NEEDED: P/E cycle endurance]
Package Type — [DATA_NEEDED: package type and dimensions]
Montageart — Surface Mount
RoHS-Status — [DATA_NEEDED: RoHS status]

Datenblätter & Ressourcen

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