K9ADGD8S0A vs K9DVGY8J5M Comparação

Comparação detalhada lado a lado de K9ADGD8S0A por Samsung Electronics e K9DVGY8J5M por Samsung Electronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Samsung Electronics
K9ADGD8S0A K9ADGD8S0A - 3D V-NAND TCAT Flash Memory Die | Samsung

K9ADGD8S0A - 3D V-NAND TCAT Flash Memory Die | Samsung

K9ADGD8S0A ✗ Fim de vida
Samsung Electronics
K9DVGY8J5M K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M ✓ Ativo

Comparação de especificações

Parâmetro K9ADGD8S0A K9DVGY8J5M
Marca Samsung Electronics Samsung Electronics
Categoria EEPROM Memory ICs
Status do ciclo de vida Fim de vida Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,00 $1,00
Device Type 3D V-NAND flash memory bare die —
Process Technology Terabit Cell Array Transistor (TCAT) —
Architecture 3D vertical NAND (V-NAND) —
Form Factor Bare die (unpackaged) —
Found In Samsung K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages —
Known Application Samsung 850 Pro 128 GB SSD —
Memory Class Non-volatile NAND flash —
Manufacturer Samsung Electronics Samsung Electronics
Documented By TechInsights report SAR-1407-802 —
Capacity [DATA_NEEDED: die capacity] —
Tensão de alimentação [DATA_NEEDED: supply voltage] —
Interface [DATA_NEEDED: interface type] —
Page Size [DATA_NEEDED: page size] —
Program/Erase Cycles [DATA_NEEDED: endurance] —
Temperatura de operação [DATA_NEEDED: operating temperature] [DATA_NEEDED: operating temperature range]
Encapsulamento [DATA_NEEDED: package] —
Product Type — Raw NAND Flash Memory
NAND Technology — Samsung V-NAND (3D TLC)
Flash ID — EC519A3F8CCB
Density — [DATA_NEEDED: die density (Gb)]
Organization (Page/Block) — [DATA_NEEDED: page and block organization]
Tipo de interface — [DATA_NEEDED: interface (toggle DDR / async)]
Supply Voltage (VCC) — [DATA_NEEDED: VCC voltage]
Supply Voltage (VCCQ) — [DATA_NEEDED: VCCQ voltage]
Program Page Time (tPROG) — [DATA_NEEDED: tPROG typical/us]
Block Erase Time (tBERS) — [DATA_NEEDED: tBERS typical/us]
Read Time (tR) — [DATA_NEEDED: tR typical/us]
Program/Erase Endurance — [DATA_NEEDED: P/E cycle endurance]
Package Type — [DATA_NEEDED: package type and dimensions]
Tipo de montagem — Surface Mount
Status RoHS — [DATA_NEEDED: RoHS status]

Fichas técnicas e recursos

Ver todos os produtos Criar BOM Solicitar cotação