K9ADGD8S0A vs K9DVGY8J5M Comparaison
Comparaison détaillée côte à côte de K9ADGD8S0A par Samsung Electronics et K9DVGY8J5M par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | K9ADGD8S0A | K9DVGY8J5M |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | EEPROM | Memory ICs |
| Statut du cycle de vie | Fin de vie | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $1,00 |
| Device Type | 3D V-NAND flash memory bare die | — |
| Process Technology | Terabit Cell Array Transistor (TCAT) | — |
| Architecture | 3D vertical NAND (V-NAND) | — |
| Form Factor | Bare die (unpackaged) | — |
| Found In | Samsung K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages | — |
| Known Application | Samsung 850 Pro 128 GB SSD | — |
| Memory Class | Non-volatile NAND flash | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Documented By | TechInsights report SAR-1407-802 | — |
| Capacity | [DATA_NEEDED: die capacity] | — |
| Tension d'alimentation | [DATA_NEEDED: supply voltage] | — |
| Interface | [DATA_NEEDED: interface type] | — |
| Page Size | [DATA_NEEDED: page size] | — |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature] | [DATA_NEEDED: operating temperature range] |
| Boîtier | [DATA_NEEDED: package] | — |
| Product Type | — | Raw NAND Flash Memory |
| NAND Technology | — | Samsung V-NAND (3D TLC) |
| Flash ID | — | EC519A3F8CCB |
| Density | — | [DATA_NEEDED: die density (Gb)] |
| Organization (Page/Block) | — | [DATA_NEEDED: page and block organization] |
| Type d'interface | — | [DATA_NEEDED: interface (toggle DDR / async)] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC voltage] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ voltage] |
| Program Page Time (tPROG) | — | [DATA_NEEDED: tPROG typical/us] |
| Block Erase Time (tBERS) | — | [DATA_NEEDED: tBERS typical/us] |
| Read Time (tR) | — | [DATA_NEEDED: tR typical/us] |
| Program/Erase Endurance | — | [DATA_NEEDED: P/E cycle endurance] |
| Package Type | — | [DATA_NEEDED: package type and dimensions] |
| Type de montage | — | Surface Mount |
| Statut RoHS | — | [DATA_NEEDED: RoHS status] |