K9FGGY8J5A-CCK0 vs K9DUGY8S0M-CCK0 Vergleich

Detaillierter Direktvergleich von K9FGGY8J5A-CCK0 von Samsung Electronics und K9DUGY8S0M-CCK0 von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Samsung Electronics
K9FGGY8J5A-CCK0 K9FGGY8J5A-CCK0 - Samsung NAND Flash Memory | SSD Storage

K9FGGY8J5A-CCK0 - Samsung NAND Flash Memory | SSD Storage

K9FGGY8J5A-CCK0 ✓ Aktiv
Samsung Electronics
K9DUGY8S0M-CCK0 K9DUGY8S0M-CCK0 - Samsung V-NAND Flash Memory | Samsung

K9DUGY8S0M-CCK0 - Samsung V-NAND Flash Memory | Samsung

K9DUGY8S0M-CCK0 ✓ Aktiv

Spezifikationsvergleich

Parameter K9FGGY8J5A-CCK0 K9DUGY8S0M-CCK0
Marke Samsung Electronics Samsung Electronics
Kategorie EEPROM Memory ICs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $9,95 $0,00
Manufacturer Samsung Electronics Samsung Electronics
Product Family K9-series NAND Flash K9 series NAND Flash (V-NAND)
Speichertyp NAND Flash (non-volatile) NAND Flash (raw, controller-managed)
Density [DATA_NEEDED: density] [DATA_NEEDED: density]
Speicherorganisation [DATA_NEEDED: organization (e.g. x8)] —
Cell Type [DATA_NEEDED: SLC/MLC/TLC/QLC] —
Schnittstelle [DATA_NEEDED: asynchronous/toggle/ONFI] [DATA_NEEDED: interface type/width]
Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ range] —
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Program Time (typ) [DATA_NEEDED: tPROG] —
Erase Time (typ) [DATA_NEEDED: tBERS] —
Endurance [DATA_NEEDED: P/E cycles] —
Gehäuse [DATA_NEEDED: package type (FBGA)] [DATA_NEEDED: package code and pin count]
Betriebstemperatur [DATA_NEEDED: temperature range] [DATA_NEEDED: operating temperature range]
Montageart Surface Mount Surface Mount
RoHS-Status Compliant (CCK0 suffix denotes lead-free packing per Samsung ordering-code system) unknown
Cell Technology — V-NAND (vertical charge-trap)
Versorgungsspannung — [DATA_NEEDED: VCC range]
Page Program Time — [DATA_NEEDED: tPROG]
Block Erase Time — [DATA_NEEDED: tBERS]
Read Time — [DATA_NEEDED: tR]
P/E Cycle Endurance — [DATA_NEEDED: endurance]

Datenblätter & Ressourcen

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