K9FGGY8J5A-CCK0 vs K9DUGY8S0M-CCK0 Comparison
Detailed side-by-side comparison of K9FGGY8J5A-CCK0 by Samsung Electronics and K9DUGY8S0M-CCK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K9FGGY8J5A-CCK0 - Samsung NAND Flash Memory | SSD Storage
K9FGGY8J5A-CCK0 ✓ ActiveSamsung Electronics
K9DUGY8S0M-CCK0 - Samsung V-NAND Flash Memory | Samsung
K9DUGY8S0M-CCK0 ✓ ActiveSpecification Comparison
| Parameter | K9FGGY8J5A-CCK0 | K9DUGY8S0M-CCK0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | EEPROM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $9.95 | $0.00 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | K9-series NAND Flash | K9 series NAND Flash (V-NAND) |
| Memory Type | NAND Flash (non-volatile) | NAND Flash (raw, controller-managed) |
| Density | [DATA_NEEDED: density] | [DATA_NEEDED: density] |
| Organization | [DATA_NEEDED: organization (e.g. x8)] | — |
| Cell Type | [DATA_NEEDED: SLC/MLC/TLC/QLC] | — |
| Interface | [DATA_NEEDED: asynchronous/toggle/ONFI] | [DATA_NEEDED: interface type/width] |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range] | — |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ range] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program Time (typ) | [DATA_NEEDED: tPROG] | — |
| Erase Time (typ) | [DATA_NEEDED: tBERS] | — |
| Endurance | [DATA_NEEDED: P/E cycles] | — |
| Package | [DATA_NEEDED: package type (FBGA)] | [DATA_NEEDED: package code and pin count] |
| Operating Temperature | [DATA_NEEDED: temperature range] | [DATA_NEEDED: operating temperature range] |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant (CCK0 suffix denotes lead-free packing per Samsung ordering-code system) | unknown |
| Cell Technology | — | V-NAND (vertical charge-trap) |
| Supply Voltage | — | [DATA_NEEDED: VCC range] |
| Page Program Time | — | [DATA_NEEDED: tPROG] |
| Block Erase Time | — | [DATA_NEEDED: tBERS] |
| Read Time | — | [DATA_NEEDED: tR] |
| P/E Cycle Endurance | — | [DATA_NEEDED: endurance] |