K9FGGY8J5A-CCK0 vs K9DUGY8S0M-CCK0 对比

详细并排对比 K9FGGY8J5A-CCK0 出自 Samsung Electronics 和 K9DUGY8S0M-CCK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9FGGY8J5A-CCK0 K9FGGY8J5A-CCK0 - Samsung NAND Flash Memory | SSD Storage

K9FGGY8J5A-CCK0 - Samsung NAND Flash Memory | SSD Storage

K9FGGY8J5A-CCK0 ✓ 量产中
Samsung Electronics
K9DUGY8S0M-CCK0 K9DUGY8S0M-CCK0 - Samsung V-NAND Flash Memory | Samsung

K9DUGY8S0M-CCK0 - Samsung V-NAND Flash Memory | Samsung

K9DUGY8S0M-CCK0 ✓ 量产中

规格对比

参数 K9FGGY8J5A-CCK0 K9DUGY8S0M-CCK0
品牌 Samsung Electronics Samsung Electronics
分类 EEPROM Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $9.95 $0.00
Manufacturer Samsung Electronics Samsung Electronics
Product Family K9-series NAND Flash K9 series NAND Flash (V-NAND)
存储器类型 NAND Flash (non-volatile) NAND Flash (raw, controller-managed)
Density [DATA_NEEDED: density] [DATA_NEEDED: density]
存储组织 [DATA_NEEDED: organization (e.g. x8)] —
Cell Type [DATA_NEEDED: SLC/MLC/TLC/QLC] —
接口 [DATA_NEEDED: asynchronous/toggle/ONFI] [DATA_NEEDED: interface type/width]
Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ range] —
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Program Time (typ) [DATA_NEEDED: tPROG] —
Erase Time (typ) [DATA_NEEDED: tBERS] —
Endurance [DATA_NEEDED: P/E cycles] —
封装 [DATA_NEEDED: package type (FBGA)] [DATA_NEEDED: package code and pin count]
工作温度 [DATA_NEEDED: temperature range] [DATA_NEEDED: operating temperature range]
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant (CCK0 suffix denotes lead-free packing per Samsung ordering-code system) unknown
Cell Technology — V-NAND (vertical charge-trap)
电源电压 — [DATA_NEEDED: VCC range]
Page Program Time — [DATA_NEEDED: tPROG]
Block Erase Time — [DATA_NEEDED: tBERS]
Read Time — [DATA_NEEDED: tR]
P/E Cycle Endurance — [DATA_NEEDED: endurance]

数据手册与资源

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