K9FGGY8J5A-CCK0 vs K9DUGY8S0M-CCK0 Comparación

Comparación detallada lado a lado de K9FGGY8J5A-CCK0 por Samsung Electronics y K9DUGY8S0M-CCK0 por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Samsung Electronics
K9FGGY8J5A-CCK0 K9FGGY8J5A-CCK0 - Samsung NAND Flash Memory | SSD Storage

K9FGGY8J5A-CCK0 - Samsung NAND Flash Memory | SSD Storage

K9FGGY8J5A-CCK0 ✓ Activo
Samsung Electronics
K9DUGY8S0M-CCK0 K9DUGY8S0M-CCK0 - Samsung V-NAND Flash Memory | Samsung

K9DUGY8S0M-CCK0 - Samsung V-NAND Flash Memory | Samsung

K9DUGY8S0M-CCK0 ✓ Activo

Comparación de especificaciones

Parámetro K9FGGY8J5A-CCK0 K9DUGY8S0M-CCK0
Marca Samsung Electronics Samsung Electronics
Categoría EEPROM Memory ICs
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $9,95 $0,00
Manufacturer Samsung Electronics Samsung Electronics
Product Family K9-series NAND Flash K9 series NAND Flash (V-NAND)
Tipo de memoria NAND Flash (non-volatile) NAND Flash (raw, controller-managed)
Density [DATA_NEEDED: density] [DATA_NEEDED: density]
Organización de memoria [DATA_NEEDED: organization (e.g. x8)] —
Cell Type [DATA_NEEDED: SLC/MLC/TLC/QLC] —
Interfaz [DATA_NEEDED: asynchronous/toggle/ONFI] [DATA_NEEDED: interface type/width]
Supply Voltage (VCC) [DATA_NEEDED: VCC range] —
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ range] —
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Program Time (typ) [DATA_NEEDED: tPROG] —
Erase Time (typ) [DATA_NEEDED: tBERS] —
Endurance [DATA_NEEDED: P/E cycles] —
Encapsulado [DATA_NEEDED: package type (FBGA)] [DATA_NEEDED: package code and pin count]
Temperatura de funcionamiento [DATA_NEEDED: temperature range] [DATA_NEEDED: operating temperature range]
Tipo de montaje Surface Mount Surface Mount
Estado RoHS Compliant (CCK0 suffix denotes lead-free packing per Samsung ordering-code system) unknown
Cell Technology — V-NAND (vertical charge-trap)
Tensión de alimentación — [DATA_NEEDED: VCC range]
Page Program Time — [DATA_NEEDED: tPROG]
Block Erase Time — [DATA_NEEDED: tBERS]
Read Time — [DATA_NEEDED: tR]
P/E Cycle Endurance — [DATA_NEEDED: endurance]

Hojas de datos y recursos

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