K9HUGY8J5B-BCK0 - Samsung V-NAND Flash Memory | Samsung
Teilenummer: K9HUGY8J5B-BCK0 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
K9HUGY8J5B-BCK0 Übersicht
NAND flash is a non-volatile memory technology that retains data without power and is organized into pages and blocks for read and program operations. Within the memory hierarchy, NAND flash sits below DRAM and above mass storage controllers, serving as the primary non-volatile storage medium in SSDs, embedded multimedia cards (eMMC), and USB storage. Samsung is the market leader in V-NAND, and the K9 prefix denotes Samsung NAND flash products.
Key characteristics of the K9HUG family include high per-die density, an open NAND flash interface (ONFI-style asynchronous or toggle-mode signaling depending on the specific device), multi-bit-per-cell (TLC) storage for cost-per-gigabyte advantages, and industrial operating temperature support. Exact density, bus width, voltage class, and timing parameters for this specific ordering code must be confirmed from the official Samsung datasheet.
Typical applications include solid-state drives, eMMC and UFS storage modules, USB flash drives, memory cards, set-top boxes, smart TVs, automotive infotainment storage, and industrial embedded systems where high-density non-volatile storage is required.
Design consideration: V-NAND devices require a controller that implements ECC (typically LDPC), wear leveling, and bad-block management; the raw NAND cannot be used stand-alone. Verify the exact block/page organization from the device datasheet before controller integration.
This page synthesizes drop-in alternatives within the same Samsung K9 family, distributor sourcing guidance, and practical design notes to support procurement and engineering evaluation beyond the raw datasheet.
Drop-in-Alternativen für K9HUGY8J5B-BCK0 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit K9HUGY8J5B-BCK0 (gleiche Bauform und Footprint) – abweichend in Memory Type, Cell Type, Technology, RoHS Status, Density.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
K9FGGY8J5A-BCK0
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K9HQGY8S5M
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K9PRGY8S7M-CCK0
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
Preis auf Anfrage
Datenblatt ansehen →K9DVGY8J5M
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$1 / Stück
Datenblatt ansehen →K9HUGY8J5B-BCK0 Grenzwerte & elektrische Eigenschaften
| Manufacturer | Samsung Electronics |
| Product Family | K9HUG (V-NAND flash) |
| Speichertyp | NAND Flash (3D V-NAND) |
| Montageart | Surface Mount |
| RoHS-Status | Compliant |
K9HUGY8J5B-BCK0 standard Pinbelegungsleitfaden
Pinbelegung für K9HUGY8J5B-BCK0 (standard-Gehäuse). Dieser digitale IC umfasst GPIO, Kommunikationsschnittstellen (UART, SPI, I2C) und Versorgungspins. Alternative Pin-Funktionen und Konfigurationsoptionen entnehmen Sie dem Herstellerdatenblatt. Unverzichtbar für Embedded-System-Design und PCB-Layout.
Keine detaillierten Pinbelegungsdaten verfügbar für K9HUGY8J5B-BCK0.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
K9HUGY8J5B-BCK0 ist geeignet für 6 Anwendungs: Solid-State Drives (SSD), Embedded Multimedia Cards (eMMC), USB Flash Drives, Smart TV and Set-Top Box Storage, Automotive Infotainment Storage, Industrial Embedded Systems.
Solid-State Drives (SSD)
The K9HUGY8J5B-BCK0's 3D V-NAND technology and high per-die density make it a strong fit for client and enterprise SSD designs, where cost per gigabyte and sustained write performance are the primary metrics. Samsung V-NAND's vertical cell stacking improves endurance versus planar TLC, allowing SSD controllers to meet typical 5-year workload warranties. In an SSD, multiple K9HUG dies share an 8-bit or 16-bit channel to a Samsung- or third-party SSD controller that implements LDPC ECC, wear leveling, and FTL management. Channel count and die-per-channel allocation determine sequential throughput; the trade-off is that TLC V-NAND requires strong ECC overhead that consumes controller silicon area. Confirm this ordering code's exact density and interface mode from the Samsung datasheet before channel design.
Empfohlen
Embedded Multimedia Cards (eMMC)
Raw V-NAND dies such as the K9HUGY8J5B-BCK0 are the storage building blocks inside eMMC and UFS modules, where a controller wraps the NAND in a managed JEDEC interface. Using Samsung's K9HUG family gives module makers a stable, high-density TLC source with consistent page/block organization across the generation, simplifying controller firmware qualification. In an eMMC module the NAND sees the module controller's LDPC ECC and garbage collection, so raw endurance specs translate directly into module P/E-cycle ratings. Designers should verify that the module controller supports this NAND generation's timing registers and identification data. Because eMMC pins out only the managed interface, the NAND's FBGA ball map never reaches the end-product PCB, reducing layout risk.
Empfohlen
USB Flash Drives
Cost-sensitive USB flash drive designs use high-density TLC V-NAND like the K9HUGY8J5B-BCK0 to maximize capacity per package while keeping the controller cheap. Samsung V-NAND's stacked-cell architecture delivers the lowest cost per bit in the industry, which is critical in the commodity USB drive market with thin margins. The USB controller pairs one or two NAND dies with a USB 3.x bridge implementing ECC and wear leveling; the K9HUG family's toggle or asynchronous interface compatibility with mainstream USB controller vendors reduces qualification effort. The main design consideration is thermal: sustained writes on TLC NAND in a small enclosure raise junction temperature, so the datasheet's temperature limits and derating guidance must be respected to preserve endurance and data retention.
Empfohlen
Smart TV and Set-Top Box Storage
Smart TVs and set-top boxes need 8-64 GB of non-volatile storage for firmware, apps, and DVR buffering, making high-density TLC V-NAND like the K9HUGY8J5B-BCK0 the economical raw-media choice. Samsung V-NAND offers the read-latency consistency that matters for responsive app launching, and its endurance comfortably covers the write-once-read-mostly profile of firmware plus the moderate write load of DVR buffering. In these products the NAND typically hangs off an SoC-integrated NAND controller or a small eMMC-style managed solution. Layout should keep the NAND clock/data lines short and impedance-controlled to meet toggle-mode timing. Verify the SoC's NAND driver supports this generation's ONFI/toggle parameter page before committing the BOM.
Empfohlen
Automotive Infotainment Storage
Automotive infotainment and navigation systems require multi-gigabyte storage over an extended -40C to +85C (often wider) environment, and Samsung V-NAND families including the K9HUG series provide the density and quality base for such designs. In automotive builds the NAND is almost always integrated into an AEC-Q100-qualified managed module (eMMC/UFS automotive grade), with the raw K9HUG die qualified inside the module. Designers benefit from Samsung's vertical integration: NAND, controller, and module come from one vendor with consistent firmware. Key considerations are extended-temperature data retention, power-fail integrity during cranking events, and long-term supply commitments - register for Samsung PCNs and negotiate last-time-buy terms because V-NAND generations cycle every two to three years.
Empfohlen
Industrial Embedded Systems
Industrial controllers, gateways, and data loggers use high-density NAND like the K9HUGY8J5B-BCK0 for local logging and firmware storage, typically within an industrial-grade managed flash module. Samsung V-NAND's endurance and retention characteristics, combined with industrial controllers implementing strong LDPC ECC and power-fail protection, deliver the 10+ year service life industrial products require. The wide operating envelope and shock/vibration tolerance of BGA-packaged NAND (no leads to fatigue) suit harsh environments. Designers must implement brown-out detection and capacitor ride-through to protect in-flight program/erase operations, since sudden power loss corrupts TLC pages without hardware protection. Confirm the ambient temperature rating of this exact ordering code in the Samsung datasheet, as industrial suffixes differ from consumer ones.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für K9HUGY8J5B-BCK0 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | K9FGGY8J5A-BCK0 | K9HQGY8S5M | K9PRGY8S7M-CCK0 | K9DVGY8J5M |
|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Technology | 3D V-NAND | 3D V-NAND | 3D V-NAND | 3D V-NAND | 3D V-NAND |
| Lifecycle Status | Active (verify on Samsung product page) | Active (listed on XAIPART) | Active (listed on XAIPART) | Active (listed on XAIPART) | Active (listed on XAIPART) |
Wichtigste Unterscheidungsmerkmale
- Latest-generation Samsung V-NAND process (vs. K9DVGY8J5M)
- Samsung single-vendor ecosystem (vs. Cross-brand NAND (Micron/SK Hynix/Kioxia))
- TLC V-NAND cost-per-bit economics (vs. SLC/older-planar Samsung parts (K9HCG08U1M))
Designhinweise
The K9HUGY8J5B-BCK0 is a fine-pitch BGA NAND, so plan the fanout before routing: verify ball pitch from the Samsung package drawing, use via-in-pad with filled vias or short dogbones for escape, and follow IPC-recommended BGA land-pattern geometry. Place 100 nF ceramic decoupling capacitors within 2 mm of each VCC/VCCQ ball pair, plus one bulk 10 uF capacitor per supply rail. Keep the NAND data bus traces matched in length and impedance-controlled (typically 50 ohm single-ended) when the device operates in toggle-DDR mode.
Respect the datasheet power-up sequence for VCC and VCCQ: powering the I/O rail before the core rail can place the NAND in an undefined state or cause excess inrush. Estimated: TLC V-NAND program current peaks of tens of mA per die (see datasheet IDD values) mean the core rail regulator must handle simultaneous multi-die program bursts without drooping below the minimum VCC - size bulk capacitance for the worst case of all dies programming concurrently.
Raw V-NAND has no internal ECC, wear leveling, or bad-block management - connecting it directly to a processor without an FTL causes rapid data corruption. The controller must implement LDPC ECC at the strength specified for TLC in the Samsung datasheet, plus wear leveling and power-fail recovery. Also note that ordering-code suffixes (BCK0 here) encode speed grade and package; do not substitute codes without comparing the ball map and AC timing tables page by page.
NAND program/erase operations are localized heat sources; in multi-die SSD or USB designs, sustained writes can push the die well above ambient. Estimated: BGA packages on a multilayer PCB dissipate heat mainly through the ball array into the board, so a solid ground plane under the package acts as the primary heat spreader. Derate sustained write throughput or add airflow when the enclosure prevents board-level heat spreading, and honor the datasheet's maximum junction temperature for reliability.
Compliance-Informationen
RoHS compliance typical of current Samsung NAND ordering codes; download Samsung's material declaration for this exact code for REACH, halogen, and conflict-minerals status.
