K9KUGY8J7C-BCK0 vs K9MUGY8R4A-CCQ0 Vergleich
Detaillierter Direktvergleich von K9KUGY8J7C-BCK0 von Samsung Electronics und K9MUGY8R4A-CCQ0 von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics
K9KUGY8J7C-BCK0 ✓ AktivSamsung Electronics
K9MUGY8R4A-CCQ0 - Samsung V-NAND Flash Memory | Samsung Electronics
K9MUGY8R4A-CCQ0 ✓ AktivSpezifikationsvergleich
| Parameter | K9KUGY8J7C-BCK0 | K9MUGY8R4A-CCQ0 |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $9,55 | $0,00 |
| Speichertyp | NAND Flash (TLC V-NAND) | — |
| Density | 1 Tb | [DATA_NEEDED: total density] |
| Speicherorganisation | [DATA_NEEDED: page/block organization] | [DATA_NEEDED: page/block organization] |
| Cell Type | TLC (3 bits/cell) | [DATA_NEEDED: cell type (MLC/TLC)] |
| Schnittstellentyp | [DATA_NEEDED: toggle DDR / ONFI mode] | [DATA_NEEDED: interface (Toggle DDR/ONFI)] |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range in V] | — |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ range in V] | — |
| Page Size | [DATA_NEEDED: page size in KB] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | — |
| Package Type | BGA | [DATA_NEEDED: package type and pin count] |
| Package Code | [DATA_NEEDED: package code / ball count] | — |
| Betriebstemperatur | [DATA_NEEDED: temperature range in C] | [DATA_NEEDED: operating temperature range] |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Grade Suffix | BCK0 | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | — | K9 V-NAND (NAND Flash) |
| Memory Technology | — | V-NAND (vertical NAND flash) |
| Maximum I/O Speed | — | [DATA_NEEDED: data transfer rate] |
| Supply Voltage - VCC | — | [DATA_NEEDED: VCC range] |
| Supply Voltage - VCCQ | — | [DATA_NEEDED: VCCQ range] |
| Page Program Time (typ) | — | [DATA_NEEDED: tPROG] |
| Block Erase Time (typ) | — | [DATA_NEEDED: tBERS] |
| Endurance (P/E cycles) | — | [DATA_NEEDED: endurance] |