K9KUGY8J7C-BCK0 vs K9MUGY8R4A-CCQ0 Comparaison
Comparaison détaillée côte à côte de K9KUGY8J7C-BCK0 par Samsung Electronics et K9MUGY8R4A-CCQ0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics
K9KUGY8J7C-BCK0 ✓ ActifSamsung Electronics
K9MUGY8R4A-CCQ0 - Samsung V-NAND Flash Memory | Samsung Electronics
K9MUGY8R4A-CCQ0 ✓ ActifComparaison des spécifications
| Paramètre | K9KUGY8J7C-BCK0 | K9MUGY8R4A-CCQ0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $9,55 | $0,00 |
| Type de mémoire | NAND Flash (TLC V-NAND) | — |
| Density | 1 Tb | [DATA_NEEDED: total density] |
| Organisation de la mémoire | [DATA_NEEDED: page/block organization] | [DATA_NEEDED: page/block organization] |
| Cell Type | TLC (3 bits/cell) | [DATA_NEEDED: cell type (MLC/TLC)] |
| Type d'interface | [DATA_NEEDED: toggle DDR / ONFI mode] | [DATA_NEEDED: interface (Toggle DDR/ONFI)] |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range in V] | — |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ range in V] | — |
| Page Size | [DATA_NEEDED: page size in KB] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | — |
| Package Type | BGA | [DATA_NEEDED: package type and pin count] |
| Package Code | [DATA_NEEDED: package code / ball count] | — |
| Température de fonctionnement | [DATA_NEEDED: temperature range in C] | [DATA_NEEDED: operating temperature range] |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Grade Suffix | BCK0 | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | — | K9 V-NAND (NAND Flash) |
| Memory Technology | — | V-NAND (vertical NAND flash) |
| Maximum I/O Speed | — | [DATA_NEEDED: data transfer rate] |
| Supply Voltage - VCC | — | [DATA_NEEDED: VCC range] |
| Supply Voltage - VCCQ | — | [DATA_NEEDED: VCCQ range] |
| Page Program Time (typ) | — | [DATA_NEEDED: tPROG] |
| Block Erase Time (typ) | — | [DATA_NEEDED: tBERS] |
| Endurance (P/E cycles) | — | [DATA_NEEDED: endurance] |