K9KUGY8J7C-BCK0 vs K9MUGY8R4A-CCQ0 Comparação
Comparação detalhada lado a lado de K9KUGY8J7C-BCK0 por Samsung Electronics e K9MUGY8R4A-CCQ0 por Samsung Electronics. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Samsung Electronics
K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics
K9KUGY8J7C-BCK0 ✓ AtivoSamsung Electronics
K9MUGY8R4A-CCQ0 - Samsung V-NAND Flash Memory | Samsung Electronics
K9MUGY8R4A-CCQ0 ✓ AtivoComparação de especificações
| Parâmetro | K9KUGY8J7C-BCK0 | K9MUGY8R4A-CCQ0 |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoria | Memory ICs | Memory ICs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $9,55 | $0,00 |
| Tipo de memória | NAND Flash (TLC V-NAND) | — |
| Density | 1 Tb | [DATA_NEEDED: total density] |
| Organização da memória | [DATA_NEEDED: page/block organization] | [DATA_NEEDED: page/block organization] |
| Cell Type | TLC (3 bits/cell) | [DATA_NEEDED: cell type (MLC/TLC)] |
| Tipo de interface | [DATA_NEEDED: toggle DDR / ONFI mode] | [DATA_NEEDED: interface (Toggle DDR/ONFI)] |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC range in V] | — |
| Supply Voltage (VCCQ) | [DATA_NEEDED: VCCQ range in V] | — |
| Page Size | [DATA_NEEDED: page size in KB] | — |
| Block Size | [DATA_NEEDED: block size] | — |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | — |
| Package Type | BGA | [DATA_NEEDED: package type and pin count] |
| Package Code | [DATA_NEEDED: package code / ball count] | — |
| Temperatura de operação | [DATA_NEEDED: temperature range in C] | [DATA_NEEDED: operating temperature range] |
| Tipo de montagem | Surface Mount | Surface Mount |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Grade Suffix | BCK0 | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Family | — | K9 V-NAND (NAND Flash) |
| Memory Technology | — | V-NAND (vertical NAND flash) |
| Maximum I/O Speed | — | [DATA_NEEDED: data transfer rate] |
| Supply Voltage - VCC | — | [DATA_NEEDED: VCC range] |
| Supply Voltage - VCCQ | — | [DATA_NEEDED: VCCQ range] |
| Page Program Time (typ) | — | [DATA_NEEDED: tPROG] |
| Block Erase Time (typ) | — | [DATA_NEEDED: tBERS] |
| Endurance (P/E cycles) | — | [DATA_NEEDED: endurance] |