K9KUGY8J7C-BCK0 vs K9MUGY8R4A-CCQ0 Comparación

Comparación detallada lado a lado de K9KUGY8J7C-BCK0 por Samsung Electronics y K9MUGY8R4A-CCQ0 por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Samsung Electronics
K9KUGY8J7C-BCK0 K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics

K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics

K9KUGY8J7C-BCK0 ✓ Activo
Samsung Electronics
K9MUGY8R4A-CCQ0 K9MUGY8R4A-CCQ0 - Samsung V-NAND Flash Memory | Samsung Electronics

K9MUGY8R4A-CCQ0 - Samsung V-NAND Flash Memory | Samsung Electronics

K9MUGY8R4A-CCQ0 ✓ Activo

Comparación de especificaciones

Parámetro K9KUGY8J7C-BCK0 K9MUGY8R4A-CCQ0
Marca Samsung Electronics Samsung Electronics
Categoría Memory ICs Memory ICs
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $9,55 $0,00
Tipo de memoria NAND Flash (TLC V-NAND) —
Density 1 Tb [DATA_NEEDED: total density]
Organización de memoria [DATA_NEEDED: page/block organization] [DATA_NEEDED: page/block organization]
Cell Type TLC (3 bits/cell) [DATA_NEEDED: cell type (MLC/TLC)]
Tipo de interfaz [DATA_NEEDED: toggle DDR / ONFI mode] [DATA_NEEDED: interface (Toggle DDR/ONFI)]
Supply Voltage (VCC) [DATA_NEEDED: VCC range in V] —
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ range in V] —
Page Size [DATA_NEEDED: page size in KB] —
Block Size [DATA_NEEDED: block size] —
Program/Erase Cycles [DATA_NEEDED: P/E endurance] —
Package Type BGA [DATA_NEEDED: package type and pin count]
Package Code [DATA_NEEDED: package code / ball count] —
Temperatura de funcionamiento [DATA_NEEDED: temperature range in C] [DATA_NEEDED: operating temperature range]
Tipo de montaje Surface Mount Surface Mount
Estado RoHS Compliant [DATA_NEEDED: RoHS status]
Grade Suffix BCK0 —
Manufacturer Samsung Electronics Samsung Electronics
Product Family — K9 V-NAND (NAND Flash)
Memory Technology — V-NAND (vertical NAND flash)
Maximum I/O Speed — [DATA_NEEDED: data transfer rate]
Supply Voltage - VCC — [DATA_NEEDED: VCC range]
Supply Voltage - VCCQ — [DATA_NEEDED: VCCQ range]
Page Program Time (typ) — [DATA_NEEDED: tPROG]
Block Erase Time (typ) — [DATA_NEEDED: tBERS]
Endurance (P/E cycles) — [DATA_NEEDED: endurance]

Hojas de datos y recursos

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