K9LCG08U1M vs K9MDG08U5M Vergleich
Detaillierter Direktvergleich von K9LCG08U1M von Samsung Electronics und K9MDG08U5M von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K9LCG08U1M | K9MDG08U5M |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Flash | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $11,85 | $35,50 |
| Speichertyp | NAND Flash, MLC | MLC Large Block NAND Flash |
| Density | 64 Gbit (8 GB) | 16 Gbit (2 GB) |
| Speicherorganisation | x8 I/O | 16G x 8 bit |
| Schnittstelle | Asynchronous multiplexed NAND I/O | Asynchronous x8 multiplexed address/data |
| Cell Type | MLC (2 bits per cell) | MLC (2 bits per cell) |
| Gehäuse | BGA | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| Montageart | Surface Mount | Surface Mount |
| Versorgungsspannung | [DATA_NEEDED: supply voltage] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS-Status | unknown | unknown |
| Ordering Codes | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB | — |
| Supply Voltage Min | — | 2.7 V |
| Supply Voltage Max | — | 3.6 V |
| Terminals | — | 48 |
| Circuits | — | 1 |
| Die Configuration | — | Dual stacked |
| Page Read Time (tR) | — | [DATA_NEEDED: tR] |
| Program Time (tPROG) | — | [DATA_NEEDED: tPROG] |