K9LCG08U1M vs K9MDG08U5M Comparison
Detailed side-by-side comparison of K9LCG08U1M by Samsung Electronics and K9MDG08U5M by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K9LCG08U1M | K9MDG08U5M |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Flash | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $11.85 | $35.50 |
| Memory Type | NAND Flash, MLC | MLC Large Block NAND Flash |
| Density | 64 Gbit (8 GB) | 16 Gbit (2 GB) |
| Organization | x8 I/O | 16G x 8 bit |
| Interface | Asynchronous multiplexed NAND I/O | Asynchronous x8 multiplexed address/data |
| Cell Type | MLC (2 bits per cell) | MLC (2 bits per cell) |
| Package | BGA | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Supply Voltage | [DATA_NEEDED: supply voltage] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| RoHS Status | unknown | unknown |
| Ordering Codes | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB | — |
| Supply Voltage Min | — | 2.7 V |
| Supply Voltage Max | — | 3.6 V |
| Terminals | — | 48 |
| Circuits | — | 1 |
| Die Configuration | — | Dual stacked |
| Page Read Time (tR) | — | [DATA_NEEDED: tR] |
| Program Time (tPROG) | — | [DATA_NEEDED: tPROG] |