K9LCG08U1M vs K9MDG08U5M Comparaison
Comparaison détaillée côte à côte de K9LCG08U1M par Samsung Electronics et K9MDG08U5M par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | K9LCG08U1M | K9MDG08U5M |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Flash | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $11,85 | $35,50 |
| Type de mémoire | NAND Flash, MLC | MLC Large Block NAND Flash |
| Density | 64 Gbit (8 GB) | 16 Gbit (2 GB) |
| Organisation de la mémoire | x8 I/O | 16G x 8 bit |
| Interface | Asynchronous multiplexed NAND I/O | Asynchronous x8 multiplexed address/data |
| Cell Type | MLC (2 bits per cell) | MLC (2 bits per cell) |
| Boîtier | BGA | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| Type de montage | Surface Mount | Surface Mount |
| Tension d'alimentation | [DATA_NEEDED: supply voltage] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Statut RoHS | unknown | unknown |
| Ordering Codes | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB | — |
| Supply Voltage Min | — | 2.7 V |
| Supply Voltage Max | — | 3.6 V |
| Terminals | — | 48 |
| Circuits | — | 1 |
| Die Configuration | — | Dual stacked |
| Page Read Time (tR) | — | [DATA_NEEDED: tR] |
| Program Time (tPROG) | — | [DATA_NEEDED: tPROG] |