K9MDG08U5M vs K9LCG08U1M Vergleich
Detaillierter Direktvergleich von K9MDG08U5M von Samsung Electronics und K9LCG08U1M von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K9MDG08U5M | K9LCG08U1M |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Flash |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $35,50 | $11,85 |
| Speichertyp | MLC Large Block NAND Flash | NAND Flash, MLC |
| Density | 16 Gbit (2 GB) | 64 Gbit (8 GB) |
| Speicherorganisation | 16G x 8 bit | x8 I/O |
| Cell Type | MLC (2 bits per cell) | MLC (2 bits per cell) |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| Schnittstelle | Asynchronous x8 multiplexed address/data | Asynchronous multiplexed NAND I/O |
| Gehäuse | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | BGA |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | — |
| RoHS-Status | unknown | unknown |
| Versorgungsspannung | — | [DATA_NEEDED: supply voltage] |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Ordering Codes | — | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB |