K9MDG08U5M vs K9LCG08U1M 比較
詳細な並列比較: K9MDG08U5M メーカー: Samsung Electronics および K9LCG08U1M メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | K9MDG08U5M | K9LCG08U1M |
|---|---|---|
| ブランド | Samsung Electronics | Samsung Electronics |
| カテゴリ | Memory ICs | Flash |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $35.50 | $11.85 |
| メモリタイプ | MLC Large Block NAND Flash | NAND Flash, MLC |
| Density | 16 Gbit (2 GB) | 64 Gbit (8 GB) |
| メモリ構成 | 16G x 8 bit | x8 I/O |
| Cell Type | MLC (2 bits per cell) | MLC (2 bits per cell) |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| インターフェース | Asynchronous x8 multiplexed address/data | Asynchronous multiplexed NAND I/O |
| パッケージ | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | BGA |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | — |
| RoHS ステータス | unknown | unknown |
| 電源電圧 | — | [DATA_NEEDED: supply voltage] |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Ordering Codes | — | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB |