K9MDG08U5M vs K9LCG08U1M Comparison
Detailed side-by-side comparison of K9MDG08U5M by Samsung Electronics and K9LCG08U1M by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K9MDG08U5M | K9LCG08U1M |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Flash |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $35.50 | $11.85 |
| Memory Type | MLC Large Block NAND Flash | NAND Flash, MLC |
| Density | 16 Gbit (2 GB) | 64 Gbit (8 GB) |
| Organization | 16G x 8 bit | x8 I/O |
| Cell Type | MLC (2 bits per cell) | MLC (2 bits per cell) |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| Interface | Asynchronous x8 multiplexed address/data | Asynchronous multiplexed NAND I/O |
| Package | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | BGA |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | — |
| RoHS Status | unknown | unknown |
| Supply Voltage | — | [DATA_NEEDED: supply voltage] |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Ordering Codes | — | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB |