K9MDG08U5M vs K9LCG08U1M Comparación
Comparación detallada lado a lado de K9MDG08U5M por Samsung Electronics y K9LCG08U1M por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | K9MDG08U5M | K9LCG08U1M |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Flash |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $35,50 | $11,85 |
| Tipo de memoria | MLC Large Block NAND Flash | NAND Flash, MLC |
| Density | 16 Gbit (2 GB) | 64 Gbit (8 GB) |
| Organización de memoria | 16G x 8 bit | x8 I/O |
| Cell Type | MLC (2 bits per cell) | MLC (2 bits per cell) |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| Interfaz | Asynchronous x8 multiplexed address/data | Asynchronous multiplexed NAND I/O |
| Encapsulado | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | BGA |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | — |
| Estado RoHS | unknown | unknown |
| Tensión de alimentación | — | [DATA_NEEDED: supply voltage] |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Ordering Codes | — | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB |