K9MDG08U5M vs K9XXG08UXM Vergleich
Detaillierter Direktvergleich von K9MDG08U5M von Samsung Electronics und K9XXG08UXM von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K9MDG08U5M | K9XXG08UXM |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Obsolete |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $35,50 | $0,00 |
| Speichertyp | MLC Large Block NAND Flash | — |
| Density | 16 Gbit (2 GB) | — |
| Speicherorganisation | 16G x 8 bit | — |
| Cell Type | MLC (2 bits per cell) | SLC (single-level cell) NAND |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| Schnittstelle | Asynchronous x8 multiplexed address/data | — |
| Gehäuse | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | 48-pin TSOP |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature] |
| Page Size | [DATA_NEEDED: page size] | (2K + 64) Byte |
| Block Size | [DATA_NEEDED: block size] | (256K + 8K) Byte |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | — |
| RoHS-Status | unknown | [DATA_NEEDED: RoHS Status] |
| Speichergröße | — | 2G x 8 Bit (2Gb) |
| Memory Cell Array Organization | — | (1G + 32M) bit x 8 bit |
| Data Register | — | (2K + 64) bit x 8 bit |
| Versorgungsspannung | — | 2.7 V to 3.6 V |
| Program Operation | — | Automatic Page Program, (2K + 64) Byte |
| Erase Operation | — | Automatic Block Erase, (256K + 8K) Byte |
| I/O Interface | — | 8-bit multiplexed address/data/command |
| Control Signals | — | CLE, ALE, CE, RE, WE, WP, R/B |
| Access Time (tR) | — | [DATA_NEEDED: Access Time] |