K9PRGY8S7M-CCK0 vs K9CHGY8S5C-CCK0 Vergleich
Detaillierter Direktvergleich von K9PRGY8S7M-CCK0 von Samsung Electronics und K9CHGY8S5C-CCK0 von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electronics
K9PRGY8S7M-CCK0 - Samsung NAND Flash Memory BGA | Samsung
K9PRGY8S7M-CCK0 ✓ AktivSamsung Electronics
K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
K9CHGY8S5C-CCK0 ✓ AktivSpezifikationsvergleich
| Parameter | K9PRGY8S7M-CCK0 | K9CHGY8S5C-CCK0 |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | EEPROM | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,00 | $0,00 |
| Speichertyp | NAND Flash | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Gehäuse | BGA (surface mount) | BGA-316 |
| Montageart | Surface Mount | Surface Mount (BGA reflow) |
| RoHS-Status | Lead free / RoHS compliant | [DATA_NEEDED: RoHS status] |
| Density | [DATA_NEEDED: density] | [DATA_NEEDED: total density in Gb] |
| Memory Bus Width | [DATA_NEEDED: bus width] | — |
| Versorgungsspannung | [DATA_NEEDED: supply voltage] | — |
| Schnittstelle | [DATA_NEEDED: interface type] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | [DATA_NEEDED: P/E endurance] |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Package Ball Count | [DATA_NEEDED: BGA ball count] | — |
| Product Type | — | NAND Flash Memory |
| Speicherorganisation | — | x8 (8-bit data access), quad CE configuration |
| Chip Enable Count | — | 16 (CE_n) |
| Pin Reduction | — | Not used |
| Supply Rail VCC | — | 1.83 V |
| Supply Rail (secondary) | — | 1.84 V |
| Supply Rail VCCQ-class | — | 2.96 V |
| Program/Erase Supply Rail | — | 12 V domain |
| Memory Technology | — | [DATA_NEEDED: cell type / V-NAND generation] |
| Schnittstellentyp | — | [DATA_NEEDED: toggle DDR / ONFI, max data rate] |