K9PRGY8S7M-CCK0 vs K9CHGY8S5C-CCK0 Сравнение
Подробное сравнение бок о бок K9PRGY8S7M-CCK0 от Samsung Electronics и K9CHGY8S5C-CCK0 от Samsung Electronics. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Samsung Electronics
K9PRGY8S7M-CCK0 - Samsung NAND Flash Memory BGA | Samsung
K9PRGY8S7M-CCK0 ✓ АктивенSamsung Electronics
K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
K9CHGY8S5C-CCK0 ✓ АктивенСравнение характеристик
| Параметр | K9PRGY8S7M-CCK0 | K9CHGY8S5C-CCK0 |
|---|---|---|
| Бренд | Samsung Electronics | Samsung Electronics |
| Категория | EEPROM | Memory ICs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,00 | $0,00 |
| Тип памяти | NAND Flash | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Корпус | BGA (surface mount) | BGA-316 |
| Тип монтажа | Surface Mount | Surface Mount (BGA reflow) |
| Статус RoHS | Lead free / RoHS compliant | [DATA_NEEDED: RoHS status] |
| Density | [DATA_NEEDED: density] | [DATA_NEEDED: total density in Gb] |
| Memory Bus Width | [DATA_NEEDED: bus width] | — |
| Напряжение питания | [DATA_NEEDED: supply voltage] | — |
| Интерфейс | [DATA_NEEDED: interface type] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | — |
| Рабочая температура | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | [DATA_NEEDED: P/E endurance] |
| Уровень MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Package Ball Count | [DATA_NEEDED: BGA ball count] | — |
| Product Type | — | NAND Flash Memory |
| Организация памяти | — | x8 (8-bit data access), quad CE configuration |
| Chip Enable Count | — | 16 (CE_n) |
| Pin Reduction | — | Not used |
| Supply Rail VCC | — | 1.83 V |
| Supply Rail (secondary) | — | 1.84 V |
| Supply Rail VCCQ-class | — | 2.96 V |
| Program/Erase Supply Rail | — | 12 V domain |
| Memory Technology | — | [DATA_NEEDED: cell type / V-NAND generation] |
| Тип интерфейса | — | [DATA_NEEDED: toggle DDR / ONFI, max data rate] |