K9PRGY8S7M-CCK0 vs K9CHGY8S5C-CCK0 Comparaison
Comparaison détaillée côte à côte de K9PRGY8S7M-CCK0 par Samsung Electronics et K9CHGY8S5C-CCK0 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K9PRGY8S7M-CCK0 - Samsung NAND Flash Memory BGA | Samsung
K9PRGY8S7M-CCK0 ✓ ActifSamsung Electronics
K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
K9CHGY8S5C-CCK0 ✓ ActifComparaison des spécifications
| Paramètre | K9PRGY8S7M-CCK0 | K9CHGY8S5C-CCK0 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | EEPROM | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,00 |
| Type de mémoire | NAND Flash | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Boîtier | BGA (surface mount) | BGA-316 |
| Type de montage | Surface Mount | Surface Mount (BGA reflow) |
| Statut RoHS | Lead free / RoHS compliant | [DATA_NEEDED: RoHS status] |
| Density | [DATA_NEEDED: density] | [DATA_NEEDED: total density in Gb] |
| Memory Bus Width | [DATA_NEEDED: bus width] | — |
| Tension d'alimentation | [DATA_NEEDED: supply voltage] | — |
| Interface | [DATA_NEEDED: interface type] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | — |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | [DATA_NEEDED: P/E endurance] |
| Niveau MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Package Ball Count | [DATA_NEEDED: BGA ball count] | — |
| Product Type | — | NAND Flash Memory |
| Organisation de la mémoire | — | x8 (8-bit data access), quad CE configuration |
| Chip Enable Count | — | 16 (CE_n) |
| Pin Reduction | — | Not used |
| Supply Rail VCC | — | 1.83 V |
| Supply Rail (secondary) | — | 1.84 V |
| Supply Rail VCCQ-class | — | 2.96 V |
| Program/Erase Supply Rail | — | 12 V domain |
| Memory Technology | — | [DATA_NEEDED: cell type / V-NAND generation] |
| Type d'interface | — | [DATA_NEEDED: toggle DDR / ONFI, max data rate] |