M1AFS250-1FG256I vs M1AFS250-FG256I Vergleich

Detaillierter Direktvergleich von M1AFS250-1FG256I von Microchip Technology und M1AFS250-FG256I von Microchip Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Microchip Technology
M1AFS250-1FG256I M1AFS250-1FG256I - 250K Gate Fusion FPGA, 114 I/O | Microchip

M1AFS250-1FG256I - 250K Gate Fusion FPGA, 114 I/O | Microchip

M1AFS250-1FG256I ✓ Aktiv
Microchip Technology
M1AFS250-FG256I M1AFS250-FG256I - 250K FPGA, 256-LBGA | Microchip

M1AFS250-FG256I - 250K FPGA, 256-LBGA | Microchip

M1AFS250-FG256I ✓ Aktiv

Spezifikationsvergleich

Parameter M1AFS250-1FG256I M1AFS250-FG256I
Marke Microchip Technology Microchip Technology
Kategorie FPGA & CPLD FPGA & CPLD
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $96,50 $33,10
Series Fusion (M1 - with ARM Cortex-M1) Fusion
System Gates 250000 gates —
D Flip-Flops (DFF) 36864 —
Total I/O 114 —
Core Supply Voltage 1.5 V (1.425 V to 1.575 V) —
Configuration Type Flash-based (live at power-up) —
Embedded Processor ARM Cortex-M1 soft core —
Analog Features Configurable analog blocks, clock generation and management —
On-chip Memory Flash memory blocks —
Betriebstemperatur -40C to +85C (industrial, suffix I) -40C ~ +100C (TJ)
Speed Grade -1 [DATA_NEEDED: speed grade]
Gehäuse 256-LBGA (FBGA) —
Package Dimensions 17 mm x 17 mm x 1.2 mm height —
Montageart Surface Mount Surface Mount
Supplier Device Package 256-LBGA 256-FPBGA (17x17)
Total RAM [DATA_NEEDED: Total RAM bits] —
Embedded Block RAM (eSRAM) [DATA_NEEDED: eSRAM size] —
Moisture Sensitivity Level [DATA_NEEDED: MSL level] —
Number of Gates — 250000
Number of I/O — 114
Total RAM Bits — 36864
Number of Logic Elements — [DATA_NEEDED: Number of Logic Elements]
Versorgungsspannung — 1.425V ~ 1.575V
Gehäuse / Bauform — 256-LBGA
Packaging — Tray
Product Status — Active
Manufacturer Lead Time — 16 weeks
Process Technology — 130nm, 7-layer metal, flash-based CMOS
System Performance — 350 MHz
Core — ARM Cortex-M1
RoHS-Status — RoHS Non-Compliant
Lead Free Status — Contains Lead

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