M29F200FT55M3F2 vs M29F160FB55N3F2 Vergleich
Detaillierter Direktvergleich von M29F200FT55M3F2 von Micron Technology und M29F160FB55N3F2 von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive
M29F200FT55M3F2 ✓ Aktiv
Spezifikationsvergleich
| Parameter | M29F200FT55M3F2 | M29F160FB55N3F2 |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Obsolete |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,85 | $5,60 |
| Speichertyp | Parallel NOR Flash | Parallel NOR Flash |
| Density | 2 Mbit (2097 kbits) | 16777 kbits (16 Mbit) |
| Speicherorganisation | 256K x 8 / 128K x 16 | 1 Mword x 16 bits / 2 Mbyte x 8 bits |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | — |
| Boot Block Architecture | Top Boot Block | Bottom Boot Block |
| Programming Interface | Embedded program/erase controller, byte or word | — |
| Betriebstemperatur | -40C to +125C | -40 to +125 C |
| Automotive Qualification | Yes | — |
| Gehäuse | 44-pin SO (TSOP) | — |
| Montageart | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (T/R) | — |
| Number of Words (x16 mode) | 128 K | — |
| Bits per Word (x16 mode) | 16 bits | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant (lead-free) |
| Program/Erase Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Number of Words | — | 1000 k |
| Bits per Word | — | 16 bits |
| Versorgungsspannung | — | 5 V |
| Schnittstelle | — | Parallel |
| Package Type | — | 48-TSOP |
| Termination Finish | — | Lead-free (F2 suffix) |
| Program/Erase Controller | — | Embedded byte/word program algorithms |
| Block Protection | — | Hardware boot block protection |
| Speed Grade (from MPN) | — | 55 (55 ns) |