M29F200FT55M3F2 vs M29F160FB55N3F2 对比

详细并排对比 M29F200FT55M3F2 出自 Micron Technology 和 M29F160FB55N3F2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29F200FT55M3F2 M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive

M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive

M29F200FT55M3F2 ✓ 量产中
Micron Technology
M29F160FB55N3F2 M29F160FB55N3F2 - 16Mbit 5V NOR Flash 55ns | Micron

M29F160FB55N3F2 - 16Mbit 5V NOR Flash 55ns | Micron

M29F160FB55N3F2 Obsolete

规格对比

参数 M29F200FT55M3F2 M29F160FB55N3F2
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 Obsolete
库存状态 有库存 有库存
单价(USD) $1.85 $5.60
存储器类型 Parallel NOR Flash Parallel NOR Flash
Density 2 Mbit (2097 kbits) 16777 kbits (16 Mbit)
存储组织 256K x 8 / 128K x 16 1 Mword x 16 bits / 2 Mbyte x 8 bits
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V —
Boot Block Architecture Top Boot Block Bottom Boot Block
Programming Interface Embedded program/erase controller, byte or word —
工作温度 -40C to +125C -40 to +125 C
Automotive Qualification Yes —
封装 44-pin SO (TSOP) —
安装类型 Surface Mount Surface Mount
Packaging Tape & Reel (T/R) —
Number of Words (x16 mode) 128 K —
Bits per Word (x16 mode) 16 bits —
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant (lead-free)
Program/Erase Endurance [DATA_NEEDED: program/erase cycles] —
Number of Words — 1000 k
Bits per Word — 16 bits
电源电压 — 5 V
接口 — Parallel
Package Type — 48-TSOP
Termination Finish — Lead-free (F2 suffix)
Program/Erase Controller — Embedded byte/word program algorithms
Block Protection — Hardware boot block protection
Speed Grade (from MPN) — 55 (55 ns)

数据手册与资源

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