M29F800FT55N3F2 vs M29W400FT55N3F Vergleich
Detaillierter Direktvergleich von M29F800FT55N3F2 von Micron Technology und M29W400FT55N3F von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29F800FT55N3F2 | M29W400FT55N3F |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $1,92 |
| Speichertyp | NOR Flash, Parallel | NOR Flash |
| Speichergröße | 8 Mbit | 4 Mbit |
| Speicherorganisation | 1M x 8 bit / 512K x 16 bit | 4Mbit, block-organized, top boot block |
| Versorgungsspannung | 5 V (single supply) | [DATA_NEEDED: supply voltage range] |
| Access Time | 55 ns | 55 ns |
| Schnittstelle | Parallel | Parallel |
| Boot Block Architecture | Top boot block (T) | — |
| Programming Voltage | 5.0 V VCC (no 12 V VPP required) | — |
| Gehäuse | 48-pin TSOP | 48-TSOP I |
| Montageart | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (T/R) | Tape & Reel (TR suffix) |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Erase Block Size | [DATA_NEEDED: block size] | — |
| Data Retention | [DATA_NEEDED: data retention] | [DATA_NEEDED: data retention] |
| Program/Erase Cycles | [DATA_NEEDED: endurance cycles] | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Active Read Current | [DATA_NEEDED: ICC read] | — |
| Bus Configuration | — | x8 / x16 (BYTE-selectable) |
| Program/Erase | — | Block erase, word/byte program |
| Suspend/Resume | — | Erase/program suspend and resume |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Prefix F in MPN | — | Pb-free package suffix |