M29F800FT55N3F2 vs M29W400FT55N3F Comparaison
Comparaison détaillée côte à côte de M29F800FT55N3F2 par Micron Technology et M29W400FT55N3F par Micron Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | M29F800FT55N3F2 | M29W400FT55N3F |
|---|---|---|
| Marque | Micron Technology | Micron Technology |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,78 | $1,92 |
| Type de mémoire | NOR Flash, Parallel | NOR Flash |
| Taille de mémoire | 8 Mbit | 4 Mbit |
| Organisation de la mémoire | 1M x 8 bit / 512K x 16 bit | 4Mbit, block-organized, top boot block |
| Tension d'alimentation | 5 V (single supply) | [DATA_NEEDED: supply voltage range] |
| Access Time | 55 ns | 55 ns |
| Interface | Parallel | Parallel |
| Boot Block Architecture | Top boot block (T) | — |
| Programming Voltage | 5.0 V VCC (no 12 V VPP required) | — |
| Boîtier | 48-pin TSOP | 48-TSOP I |
| Type de montage | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (T/R) | Tape & Reel (TR suffix) |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Erase Block Size | [DATA_NEEDED: block size] | — |
| Data Retention | [DATA_NEEDED: data retention] | [DATA_NEEDED: data retention] |
| Program/Erase Cycles | [DATA_NEEDED: endurance cycles] | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Active Read Current | [DATA_NEEDED: ICC read] | — |
| Bus Configuration | — | x8 / x16 (BYTE-selectable) |
| Program/Erase | — | Block erase, word/byte program |
| Suspend/Resume | — | Erase/program suspend and resume |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Prefix F in MPN | — | Pb-free package suffix |