M29F800FT55N3F2 vs M29W400FT55N3F 对比

详细并排对比 M29F800FT55N3F2 出自 Micron Technology 和 M29W400FT55N3F 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29F800FT55N3F2 M29F800FT55N3F2 - 8Mbit 5V NOR Flash 55ns | Micron

M29F800FT55N3F2 - 8Mbit 5V NOR Flash 55ns | Micron

M29F800FT55N3F2 ✓ 量产中
Micron Technology
M29W400FT55N3F M29W400FT55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FT55N3F - 4Mbit 55ns Parallel NOR Flash | Micron

M29W400FT55N3F ✓ 量产中

规格对比

参数 M29F800FT55N3F2 M29W400FT55N3F
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.78 $1.92
存储器类型 NOR Flash, Parallel NOR Flash
存储容量 8 Mbit 4 Mbit
存储组织 1M x 8 bit / 512K x 16 bit 4Mbit, block-organized, top boot block
电源电压 5 V (single supply) [DATA_NEEDED: supply voltage range]
Access Time 55 ns 55 ns
接口 Parallel Parallel
Boot Block Architecture Top boot block (T) —
Programming Voltage 5.0 V VCC (no 12 V VPP required) —
封装 48-pin TSOP 48-TSOP I
安装类型 Surface Mount Surface Mount
Packaging Tape & Reel (T/R) Tape & Reel (TR suffix)
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Erase Block Size [DATA_NEEDED: block size] —
Data Retention [DATA_NEEDED: data retention] [DATA_NEEDED: data retention]
Program/Erase Cycles [DATA_NEEDED: endurance cycles] —
RoHS 状态 [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Active Read Current [DATA_NEEDED: ICC read] —
Bus Configuration — x8 / x16 (BYTE-selectable)
Program/Erase — Block erase, word/byte program
Suspend/Resume — Erase/program suspend and resume
Endurance — [DATA_NEEDED: program/erase cycles]
Prefix F in MPN — Pb-free package suffix

数据手册与资源

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