M29F800FT55N3F2 vs M29W400FT55N3F Comparación
Comparación detallada lado a lado de M29F800FT55N3F2 por Micron Technology y M29W400FT55N3F por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | M29F800FT55N3F2 | M29W400FT55N3F |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,78 | $1,92 |
| Tipo de memoria | NOR Flash, Parallel | NOR Flash |
| Tamaño de memoria | 8 Mbit | 4 Mbit |
| Organización de memoria | 1M x 8 bit / 512K x 16 bit | 4Mbit, block-organized, top boot block |
| Tensión de alimentación | 5 V (single supply) | [DATA_NEEDED: supply voltage range] |
| Access Time | 55 ns | 55 ns |
| Interfaz | Parallel | Parallel |
| Boot Block Architecture | Top boot block (T) | — |
| Programming Voltage | 5.0 V VCC (no 12 V VPP required) | — |
| Encapsulado | 48-pin TSOP | 48-TSOP I |
| Tipo de montaje | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (T/R) | Tape & Reel (TR suffix) |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Erase Block Size | [DATA_NEEDED: block size] | — |
| Data Retention | [DATA_NEEDED: data retention] | [DATA_NEEDED: data retention] |
| Program/Erase Cycles | [DATA_NEEDED: endurance cycles] | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Active Read Current | [DATA_NEEDED: ICC read] | — |
| Bus Configuration | — | x8 / x16 (BYTE-selectable) |
| Program/Erase | — | Block erase, word/byte program |
| Suspend/Resume | — | Erase/program suspend and resume |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Prefix F in MPN | — | Pb-free package suffix |