M29W128GL70N3F vs M29W640GB70N3F Vergleich
Detaillierter Direktvergleich von M29W128GL70N3F von Micron Technology und M29W640GB70N3F von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W128GL70N3F | M29W640GB70N3F |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Obsolete |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,48 | $2,66 |
| Speichertyp | NOR Flash | NOR Flash, Parallel |
| Memory Format | FLASH - NOR | — |
| Density | 128 Mbit | 64 Mb (8 MB) |
| Speicherorganisation | 8M x16 / 16M x8 | x8 / x16 |
| Schnittstelle | Parallel | — |
| Access Time | 70 ns | 70 ns |
| Versorgungsspannung | [DATA_NEEDED: supply voltage range] | 2.7 V to 3.6 V |
| Gehäuse | 56-TSOP | 48-TSOP I |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Block Organization Variant | GL (boot-block) | — |
| Speed Grade Code | -70 | — |
| Package Finish Code | N3F (lead-free TSOP) | — |
| Programming Interface | Command-set parallel bus, embedded state machine | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant (per JLCPCB listing) |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL level] | — |
| Qualification | — | Automotive AEC-Q100 |
| Program/Erase Interface | — | Parallel command set with status polling |
| Block Architecture | — | Uniform block (GB variant) |
| Part Status | — | Obsolete |
| Endurance | — | [DATA_NEEDED: program/erase endurance cycles] |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Read Current | — | [DATA_NEEDED: active read current] |