M29W128GL70N3F vs M29W640GB70N3F 对比

详细并排对比 M29W128GL70N3F 出自 Micron Technology 和 M29W640GB70N3F 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
M29W128GL70N3F M29W128GL70N3F - 128Mbit Parallel NOR Flash 70ns | Micron

M29W128GL70N3F - 128Mbit Parallel NOR Flash 70ns | Micron

M29W128GL70N3F ✓ 量产中
Micron Technology
M29W640GB70N3F M29W640GB70N3F - 64Mb 70ns Parallel NOR Flash | Micron

M29W640GB70N3F - 64Mb 70ns Parallel NOR Flash | Micron

M29W640GB70N3F Obsolete

规格对比

参数 M29W128GL70N3F M29W640GB70N3F
品牌 Micron Technology Micron Technology
分类 Memory ICs Memory ICs
生命周期状态 有效 Obsolete
库存状态 有库存 有库存
单价(USD) $2.48 $2.66
存储器类型 NOR Flash NOR Flash, Parallel
Memory Format FLASH - NOR —
Density 128 Mbit 64 Mb (8 MB)
存储组织 8M x16 / 16M x8 x8 / x16
接口 Parallel —
Access Time 70 ns 70 ns
电源电压 [DATA_NEEDED: supply voltage range] 2.7 V to 3.6 V
封装 56-TSOP 48-TSOP I
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: operating temperature range] -40C to +125C
Block Organization Variant GL (boot-block) —
Speed Grade Code -70 —
Package Finish Code N3F (lead-free TSOP) —
Programming Interface Command-set parallel bus, embedded state machine —
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant (per JLCPCB listing)
Moisture Sensitivity Level [DATA_NEEDED: MSL level] —
Qualification — Automotive AEC-Q100
Program/Erase Interface — Parallel command set with status polling
Block Architecture — Uniform block (GB variant)
Part Status — Obsolete
Endurance — [DATA_NEEDED: program/erase endurance cycles]
Standby Current — [DATA_NEEDED: standby current]
Read Current — [DATA_NEEDED: active read current]

数据手册与资源

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