M29W160EB80ZA3SE vs M29W160FB70N3E Vergleich

Detaillierter Direktvergleich von M29W160EB80ZA3SE von Micron Technology und M29W160FB70N3E von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Micron Technology
M29W160EB80ZA3SE M29W160EB80ZA3SE - 16Mb NOR Flash 80ns TFBGA-48 | Micron

M29W160EB80ZA3SE - 16Mb NOR Flash 80ns TFBGA-48 | Micron

M29W160EB80ZA3SE ✓ Aktiv
Micron Technology
M29W160FB70N3E M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E - 16Mb 3V Parallel NOR Flash 70ns | Micron

M29W160FB70N3E ✓ Aktiv

Spezifikationsvergleich

Parameter M29W160EB80ZA3SE M29W160FB70N3E
Marke Micron Technology Micron Technology
Kategorie Memory ICs Memory ICs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,35 $3,58
Speichertyp NOR Flash (Parallel) FLASH - NOR
Speichergröße 16 Mbit (2M x8 / 1M x16) 16 Mbit (2M x8 / 1M x16)
Access Time 80 ns 70 ns
Schnittstelle Parallel (Byte-wide / Word-wide) Parallel
Versorgungsspannung 2.7 V to 3.6 V —
Speicherorganisation 16 Mbit Boot Block, x8/x16 selectable —
Betriebstemperatur -40C to +125C [DATA_NEEDED: operating temperature range]
Gehäuse 48-TFBGA (6x8 mm, 0.8 mm ball pitch) —
Montageart Surface Mount (BGA) Surface Mount
Packaging Tape & Reel (TR) Tray
Qualification AEC-Q100 (automotive grade per datasheets.com listing) —
Programming Supply Single 3V supply for program, erase and read —
Technology Family M29W160EB (3rd generation M29W series) —
Data Retention [DATA_NEEDED: data retention] [DATA_NEEDED: data retention]
Erase Block Architecture Boot block (parameter and main blocks) —
Program/Erase Cycles [DATA_NEEDED: program/erase endurance cycles] —
Moisture Sensitivity Level [DATA_NEEDED: MSL level] —
RoHS-Status Pb-free (SE suffix) —
Supply Voltage (VCC) — 3.0 V to 3.6 V
Programming Voltage — Single supply (no separate VPP required)
Bus Configuration — x8 / x16 selectable (BYTE# pin)
Architecture — Boot block
Gehäuse / Bauform — 48-TFSOP (0.724 in, 18.40 mm width)
Program/Erase Endurance — [DATA_NEEDED: program/erase cycles]
Status Output — Data polling / toggle bit
Block Protection — Yes (boot block protection)

Datenblätter & Ressourcen

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