M29W160EB80ZA3SE vs M29W160FB70N3E 对比
详细并排对比 M29W160EB80ZA3SE 出自 Micron Technology 和 M29W160FB70N3E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | M29W160EB80ZA3SE | M29W160FB70N3E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.35 | $3.58 |
| 存储器类型 | NOR Flash (Parallel) | FLASH - NOR |
| 存储容量 | 16 Mbit (2M x8 / 1M x16) | 16 Mbit (2M x8 / 1M x16) |
| Access Time | 80 ns | 70 ns |
| 接口 | Parallel (Byte-wide / Word-wide) | Parallel |
| 电源电压 | 2.7 V to 3.6 V | — |
| 存储组织 | 16 Mbit Boot Block, x8/x16 selectable | — |
| 工作温度 | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| 封装 | 48-TFBGA (6x8 mm, 0.8 mm ball pitch) | — |
| 安装类型 | Surface Mount (BGA) | Surface Mount |
| Packaging | Tape & Reel (TR) | Tray |
| Qualification | AEC-Q100 (automotive grade per datasheets.com listing) | — |
| Programming Supply | Single 3V supply for program, erase and read | — |
| Technology Family | M29W160EB (3rd generation M29W series) | — |
| Data Retention | [DATA_NEEDED: data retention] | [DATA_NEEDED: data retention] |
| Erase Block Architecture | Boot block (parameter and main blocks) | — |
| Program/Erase Cycles | [DATA_NEEDED: program/erase endurance cycles] | — |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL level] | — |
| RoHS 状态 | Pb-free (SE suffix) | — |
| Supply Voltage (VCC) | — | 3.0 V to 3.6 V |
| Programming Voltage | — | Single supply (no separate VPP required) |
| Bus Configuration | — | x8 / x16 selectable (BYTE# pin) |
| Architecture | — | Boot block |
| 封装 / 外壳 | — | 48-TFSOP (0.724 in, 18.40 mm width) |
| Program/Erase Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Status Output | — | Data polling / toggle bit |
| Block Protection | — | Yes (boot block protection) |