M29W400FT55N3F vs M29F800FT55N3F2 Vergleich
Detaillierter Direktvergleich von M29W400FT55N3F von Micron Technology und M29F800FT55N3F2 von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W400FT55N3F | M29F800FT55N3F2 |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,92 | $0,78 |
| Speichertyp | NOR Flash | NOR Flash, Parallel |
| Speichergröße | 4 Mbit | 8 Mbit |
| Schnittstelle | Parallel | Parallel |
| Access Time | 55 ns | 55 ns |
| Bus Configuration | x8 / x16 (BYTE-selectable) | — |
| Speicherorganisation | 4Mbit, block-organized, top boot block | 1M x 8 bit / 512K x 16 bit |
| Program/Erase | Block erase, word/byte program | — |
| Gehäuse | 48-TSOP I | 48-pin TSOP |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Versorgungsspannung | [DATA_NEEDED: supply voltage range] | 5 V (single supply) |
| Suspend/Resume | Erase/program suspend and resume | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: data retention] | [DATA_NEEDED: data retention] |
| Packaging | Tape & Reel (TR suffix) | Tape & Reel (T/R) |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Prefix F in MPN | Pb-free package suffix | — |
| Boot Block Architecture | — | Top boot block (T) |
| Programming Voltage | — | 5.0 V VCC (no 12 V VPP required) |
| Erase Block Size | — | [DATA_NEEDED: block size] |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: ICC read] |