M29W400FT55N3F vs M29F800FT55N3F2 Comparaison
Comparaison détaillée côte à côte de M29W400FT55N3F par Micron Technology et M29F800FT55N3F2 par Micron Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | M29W400FT55N3F | M29F800FT55N3F2 |
|---|---|---|
| Marque | Micron Technology | Micron Technology |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1,92 | $0,78 |
| Type de mémoire | NOR Flash | NOR Flash, Parallel |
| Taille de mémoire | 4 Mbit | 8 Mbit |
| Interface | Parallel | Parallel |
| Access Time | 55 ns | 55 ns |
| Bus Configuration | x8 / x16 (BYTE-selectable) | — |
| Organisation de la mémoire | 4Mbit, block-organized, top boot block | 1M x 8 bit / 512K x 16 bit |
| Program/Erase | Block erase, word/byte program | — |
| Boîtier | 48-TSOP I | 48-pin TSOP |
| Type de montage | Surface Mount | Surface Mount |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Tension d'alimentation | [DATA_NEEDED: supply voltage range] | 5 V (single supply) |
| Suspend/Resume | Erase/program suspend and resume | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: data retention] | [DATA_NEEDED: data retention] |
| Packaging | Tape & Reel (TR suffix) | Tape & Reel (T/R) |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Prefix F in MPN | Pb-free package suffix | — |
| Boot Block Architecture | — | Top boot block (T) |
| Programming Voltage | — | 5.0 V VCC (no 12 V VPP required) |
| Erase Block Size | — | [DATA_NEEDED: block size] |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: ICC read] |