M29W400FT55N3F vs M29F800FT55N3F2 Comparación
Comparación detallada lado a lado de M29W400FT55N3F por Micron Technology y M29F800FT55N3F2 por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | M29W400FT55N3F | M29F800FT55N3F2 |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,92 | $0,78 |
| Tipo de memoria | NOR Flash | NOR Flash, Parallel |
| Tamaño de memoria | 4 Mbit | 8 Mbit |
| Interfaz | Parallel | Parallel |
| Access Time | 55 ns | 55 ns |
| Bus Configuration | x8 / x16 (BYTE-selectable) | — |
| Organización de memoria | 4Mbit, block-organized, top boot block | 1M x 8 bit / 512K x 16 bit |
| Program/Erase | Block erase, word/byte program | — |
| Encapsulado | 48-TSOP I | 48-pin TSOP |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Tensión de alimentación | [DATA_NEEDED: supply voltage range] | 5 V (single supply) |
| Suspend/Resume | Erase/program suspend and resume | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: data retention] | [DATA_NEEDED: data retention] |
| Packaging | Tape & Reel (TR suffix) | Tape & Reel (T/R) |
| Estado RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Prefix F in MPN | Pb-free package suffix | — |
| Boot Block Architecture | — | Top boot block (T) |
| Programming Voltage | — | 5.0 V VCC (no 12 V VPP required) |
| Erase Block Size | — | [DATA_NEEDED: block size] |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance cycles] |
| Active Read Current | — | [DATA_NEEDED: ICC read] |