M58BW32FB5ZA3T vs M58BW32FB5T3F Vergleich
Detaillierter Direktvergleich von M58BW32FB5ZA3T von Micron Technology und M58BW32FB5T3F von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M58BW32FB5ZA3T | M58BW32FB5T3F |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,88 | $6,20 |
| Speichertyp | FLASH - NOR Memory IC | NOR Flash |
| Speichergröße | 32 Mbit | 32 Mbit |
| Speicherorganisation | x32 (Boot Block, Burst) | 1M x 32 |
| Schnittstelle | Parallel | Parallel |
| Access Time | 55 ns | 55 ns |
| Versorgungsspannung | 3.3 V (single supply) | 3.3 V |
| Burst Mode | Yes (synchronous burst read) | — |
| Block Architecture | Boot Block | — |
| Gehäuse | 80-LBGA (10 x 12 mm) | 80-PQFP (14x20 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | [DATA_NEEDED: endurance cycles] |
| Data Retention | [DATA_NEEDED: data retention] | [DATA_NEEDED: retention years] |
| Active Read Current | [DATA_NEEDED: active current] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Packaging | Tape & Reel (TR suffix) | Tape & Reel (TR) |
| RoHS-Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Qualification | — | AEC-Q100 (automotive) |
| Read Mode | — | Asynchronous and burst read |
| Architecture | — | Boot block |
| Family | — | M58BW32F 16Mb/32Mb 3.3V parallel NOR Flash |