M58BW32FB5ZA3T vs M58BW32FB5T3F Comparación
Comparación detallada lado a lado de M58BW32FB5ZA3T por Micron Technology y M58BW32FB5T3F por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | M58BW32FB5ZA3T | M58BW32FB5T3F |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $4,88 | $6,20 |
| Tipo de memoria | FLASH - NOR Memory IC | NOR Flash |
| Tamaño de memoria | 32 Mbit | 32 Mbit |
| Organización de memoria | x32 (Boot Block, Burst) | 1M x 32 |
| Interfaz | Parallel | Parallel |
| Access Time | 55 ns | 55 ns |
| Tensión de alimentación | 3.3 V (single supply) | 3.3 V |
| Burst Mode | Yes (synchronous burst read) | — |
| Block Architecture | Boot Block | — |
| Encapsulado | 80-LBGA (10 x 12 mm) | 80-PQFP (14x20 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | [DATA_NEEDED: endurance cycles] |
| Data Retention | [DATA_NEEDED: data retention] | [DATA_NEEDED: retention years] |
| Active Read Current | [DATA_NEEDED: active current] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Packaging | Tape & Reel (TR suffix) | Tape & Reel (TR) |
| Estado RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Qualification | — | AEC-Q100 (automotive) |
| Read Mode | — | Asynchronous and burst read |
| Architecture | — | Boot block |
| Family | — | M58BW32F 16Mb/32Mb 3.3V parallel NOR Flash |