MD7P19130HR3 vs MD7P19130HSR3 Vergleich
Detaillierter Direktvergleich von MD7P19130HR3 von NXP Semiconductors und MD7P19130HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MD7P19130HR3 | MD7P19130HSR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $69,50 | $65,10 |
| Transistortyp | LDMOS (Dual), N-Channel Enhancement-Mode Lateral | LDMOS (Dual), Lateral N-Channel RF Power MOSFET |
| Frequency Range | 1.93 GHz to 1.99 GHz | 1930 MHz to 1990 MHz |
| Typical Drain Voltage (VDD) | 28 V | — |
| Drain Voltage - Rated | 65 V | — |
| Quiescent Drain Current (IDQ) | 1250 mA | 1250 mA |
| Output Power (Avg, W-CDMA) | 40 W | — |
| Power Gain | 20 dB (typical at Pout = 40 W) | 20 dB typical at 1987.5 MHz |
| Drain Efficiency | 30% (typical at Pout = 40 W, W-CDMA) | 30% typical at 40 W, 1987.5 MHz |
| ACPR | -36 dBc at 5 MHz offset (3.84 MHz channel) | — |
| Input Signal PAR | 7.5 dB at 0.01% CCDF | 7.5 dB @ 0.01% probability on CCDF |
| Output Signal PAR | 6 dB at 0.01% CCDF | — |
| Gehäuse / Bauform | NI-780-4 (Case 465M-01, Style 1), ceramic flange | NI-780S-4L (CASE 465M-01, STYLE 1), ceramic flanged |
| Montageart | Surface Mount (bolt-down flange) | Chassis-mount (bolt-down) with ceramic lid |
| Technology | Airfast LDMOS, lateral N-channel | NXP HV7 LDMOS |
| RoHS-Status | [DATA_NEEDED: rohs status from manufacturer] | Compliant |
| Drain-Source Voltage (VDS) Rated | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V (typical) |
| Output Power (Pout) | — | 40 W average (W-CDMA, single-carrier) |
| ACPR (5 MHz offset, 3.84 MHz channel) | — | -36 dBc typical |
| Device Output Signal PAR | — | 6 dB @ 0.01% probability on CCDF |
| Operating Mode | — | Single-carrier W-CDMA, Class AB |