MD7P19130HR3 vs MD7P19130HSR3 비교
다음의 상세 나란히 비교: MD7P19130HR3 제조: NXP Semiconductors 및 MD7P19130HSR3 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | MD7P19130HR3 | MD7P19130HSR3 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $69.50 | $65.10 |
| 트랜지스터 유형 | LDMOS (Dual), N-Channel Enhancement-Mode Lateral | LDMOS (Dual), Lateral N-Channel RF Power MOSFET |
| Frequency Range | 1.93 GHz to 1.99 GHz | 1930 MHz to 1990 MHz |
| Typical Drain Voltage (VDD) | 28 V | — |
| Drain Voltage - Rated | 65 V | — |
| Quiescent Drain Current (IDQ) | 1250 mA | 1250 mA |
| Output Power (Avg, W-CDMA) | 40 W | — |
| Power Gain | 20 dB (typical at Pout = 40 W) | 20 dB typical at 1987.5 MHz |
| Drain Efficiency | 30% (typical at Pout = 40 W, W-CDMA) | 30% typical at 40 W, 1987.5 MHz |
| ACPR | -36 dBc at 5 MHz offset (3.84 MHz channel) | — |
| Input Signal PAR | 7.5 dB at 0.01% CCDF | 7.5 dB @ 0.01% probability on CCDF |
| Output Signal PAR | 6 dB at 0.01% CCDF | — |
| 패키지 / 케이스 | NI-780-4 (Case 465M-01, Style 1), ceramic flange | NI-780S-4L (CASE 465M-01, STYLE 1), ceramic flanged |
| 실장 유형 | Surface Mount (bolt-down flange) | Chassis-mount (bolt-down) with ceramic lid |
| Technology | Airfast LDMOS, lateral N-channel | NXP HV7 LDMOS |
| RoHS 상태 | [DATA_NEEDED: rohs status from manufacturer] | Compliant |
| Drain-Source Voltage (VDS) Rated | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V (typical) |
| Output Power (Pout) | — | 40 W average (W-CDMA, single-carrier) |
| ACPR (5 MHz offset, 3.84 MHz channel) | — | -36 dBc typical |
| Device Output Signal PAR | — | 6 dB @ 0.01% probability on CCDF |
| Operating Mode | — | Single-carrier W-CDMA, Class AB |