MD7P19130HR3 vs MD7P19130HSR3 Comparação

Comparação detalhada lado a lado de MD7P19130HR3 por NXP Semiconductors e MD7P19130HSR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MD7P19130HR3 MD7P19130HR3 - 40W, 1990 MHz RF Power LDMOS | NXP

MD7P19130HR3 - 40W, 1990 MHz RF Power LDMOS | NXP

MD7P19130HR3 ✓ Ativo
NXP Semiconductors
MD7P19130HSR3 MD7P19130HSR3 - 40W, 1.93-1.99GHz RF Power MOSFET | NXP

MD7P19130HSR3 - 40W, 1.93-1.99GHz RF Power MOSFET | NXP

MD7P19130HSR3 ✓ Ativo

Comparação de especificações

Parâmetro MD7P19130HR3 MD7P19130HSR3
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $69,50 $65,10
Tipo de transistor LDMOS (Dual), N-Channel Enhancement-Mode Lateral LDMOS (Dual), Lateral N-Channel RF Power MOSFET
Frequency Range 1.93 GHz to 1.99 GHz 1930 MHz to 1990 MHz
Typical Drain Voltage (VDD) 28 V —
Drain Voltage - Rated 65 V —
Quiescent Drain Current (IDQ) 1250 mA 1250 mA
Output Power (Avg, W-CDMA) 40 W —
Power Gain 20 dB (typical at Pout = 40 W) 20 dB typical at 1987.5 MHz
Drain Efficiency 30% (typical at Pout = 40 W, W-CDMA) 30% typical at 40 W, 1987.5 MHz
ACPR -36 dBc at 5 MHz offset (3.84 MHz channel) —
Input Signal PAR 7.5 dB at 0.01% CCDF 7.5 dB @ 0.01% probability on CCDF
Output Signal PAR 6 dB at 0.01% CCDF —
Encapsulamento / Caixa NI-780-4 (Case 465M-01, Style 1), ceramic flange NI-780S-4L (CASE 465M-01, STYLE 1), ceramic flanged
Tipo de montagem Surface Mount (bolt-down flange) Chassis-mount (bolt-down) with ceramic lid
Technology Airfast LDMOS, lateral N-channel NXP HV7 LDMOS
Status RoHS [DATA_NEEDED: rohs status from manufacturer] Compliant
Drain-Source Voltage (VDS) Rated — 65 V
Operating Drain Voltage (VDD) — 28 V (typical)
Output Power (Pout) — 40 W average (W-CDMA, single-carrier)
ACPR (5 MHz offset, 3.84 MHz channel) — -36 dBc typical
Device Output Signal PAR — 6 dB @ 0.01% probability on CCDF
Operating Mode — Single-carrier W-CDMA, Class AB

Fichas técnicas e recursos

Ver todos os produtos Criar BOM Solicitar cotação