MMA7340LR1 vs MMA7330LR1 Vergleich

Detaillierter Direktvergleich von MMA7340LR1 von NXP Semiconductors und MMA7330LR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MMA7340LR1 MMA7340LR1 - ±3g/±11g 3-Axis Analog Accelerometer | NXP

MMA7340LR1 - ±3g/±11g 3-Axis Analog Accelerometer | NXP

MMA7340LR1 ✓ Aktiv
NXP Semiconductors
MMA7330LR1 MMA7330LR1 - ±4g/±12g 3-Axis Analog Accelerometer | NXP

MMA7330LR1 - ±4g/±12g 3-Axis Analog Accelerometer | NXP

MMA7330LR1 Obsolete

Spezifikationsvergleich

Parameter MMA7340LR1 MMA7330LR1
Marke NXP Semiconductors NXP Semiconductors
Kategorie Motion Sensors Motion Sensors
Lebenszyklusstatus Aktiv Obsolete
Lagerstatus In Stock In Stock
Stückpreis (USD) $3,85 $3,76
Sensortyp 3-Axis Capacitive MEMS Accelerometer Accelerometer, 3-axis
Acceleration Range ±3g, ±11g (selectable via g-Select) ±4g (g-Select low), ±12g (g-Select high)
Ausgangstyp Analog voltage (one VOUT per axis) Analog voltage (ratiometric)
Sensitivity (3g mode) [DATA_NEEDED: 3g mode sensitivity mV/g] —
Sensitivity (11g mode) [DATA_NEEDED: 11g mode sensitivity mV/g] —
Zero-g Offset (factory trimmed) [DATA_NEEDED: zero-g offset V] —
Bandwidth (X, Y axes) 400 Hz —
Bandwidth (Z axis) 300 Hz —
Filter 1-pole low-pass 1-pole low-pass on-chip
Self-Test Yes (logic-level input) Yes (active high)
Sleep Mode Yes (logic-level input) —
Versorgungsspannung 2.2 V to 3.6 V (typical 3.3 V) —
Supply Current (active) [DATA_NEEDED: active supply current mA] —
Supply Current (sleep) [DATA_NEEDED: sleep supply current uA] —
Betriebstemperatur -40 C to +85 C -40 °C to +85 °C
Gehäuse 14-LGA (3 x 5 mm) 14-LGA (3 mm x 5 mm x 1 mm)
Montageart Surface Mount Surface Mount
RoHS-Status Compliant [DATA_NEEDED: RoHS status]
Lead-Free Status Lead Free —
Axes Measured — X, Y, Z
Sensitivity (±4g mode) — 800 mV/g (typical at Vdd=3.3 V)
Sensitivity (±12g mode) — 200 mV/g (typical at Vdd=3.3 V)
Bandwidth (X, Y) — 400 Hz
Bandwidth (Z) — 300 Hz
Supply Voltage (Vdd) — 2.2 V to 3.5 V
Supply Voltage (VddIO) — 1.71 V to 3.5 V
Versorgungsstrom — 400 µA typical
Rauschdichte — 1.5 mg/√Hz typical
Zero-g Offset (factory trim) — Pre-trimmed, no external components required
Shock Survival — 10,000 g (per NXP test methodology)

Datenblätter & Ressourcen

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