MPQ2222-TIN-LEAD vs MPQ2222 Vergleich
Detaillierter Direktvergleich von MPQ2222-TIN-LEAD von Central Semiconductor und MPQ2222 von Central Semiconductor. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Central Semiconductor
MPQ2222-TIN-LEAD - Quad NPN 40V 500mA BJT Array | Central Semiconductor
MPQ2222-TIN-LEAD ✓ AktivCentral Semiconductor
MPQ2222 - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222 ✓ AktivSpezifikationsvergleich
| Parameter | MPQ2222-TIN-LEAD | MPQ2222 |
|---|---|---|
| Marke | Central Semiconductor | Central Semiconductor |
| Kategorie | Transistors | Transistors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,54 | $0,39 |
| Transistor Configuration | Quad (4 independent NPN) | — |
| Transistortyp | NPN Bipolar Junction Transistor (BJT) | — |
| Kollektor-Emitter-Spannung (Vceo) | 40 V | — |
| Kollektor-Basis-Spannung (Vcbo) | 60 V | [DATA_NEEDED: VCBO exact value, typically 60 V class per 2N2222 family - verify in datasheet] |
| Emitter-Basis-Spannung (Vebo) | 5.0 V | [DATA_NEEDED: VEBO exact value] |
| Kollektorstrom (Ic) | 500 mA | — |
| Power Dissipation | 650 mW | — |
| Übergangsfrequenz (ft) | 200 MHz | 200 MHz |
| Gehäuse | TO-116, 14-pin DIP, Through Hole | 14-pin DIP (TO-116), Through Hole |
| Montageart | Through Hole | Through Hole |
| Plating Finish | Tin/Lead (order suffix TIN/LEAD) | — |
| Molding Compound | EMC GREEN, halogen-free | — |
| Application | General purpose amplifier and switching | — |
| Equivalent Base Type | Quad 2N2222-type | — |
| RoHS-Status | Non-compliant (lead-containing tin/lead plating variant) | Lead-free (PB Free suffix version available) |
| Configuration | — | Quad NPN Transistor Array (4 independent devices) |
| Transistor Polarity | — | NPN Silicon |
| Collector-Emitter Voltage Rating | — | 40 V |
| Continuous Collector Current (per device) | — | 500 mA |
| Power Dissipation (total package) | — | 650 mW |
| Power Dissipation (per transistor) | — | [DATA_NEEDED: per-transistor dissipation value] |
| DC Current Gain (hFE) | — | [DATA_NEEDED: hFE min/typ, higher in MPQ2222A grade] |
| Operating and Storage Junction Temperature | — | [DATA_NEEDED: exact TJ range from datasheet] |
| Thermal Resistance (total package) | — | [DATA_NEEDED: thermal resistance value] |
| Marking | — | Full part number |