MPQ2222-TIN-LEAD vs MPQ2222 Сравнение
Подробное сравнение бок о бок MPQ2222-TIN-LEAD от Central Semiconductor и MPQ2222 от Central Semiconductor. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Central Semiconductor
MPQ2222-TIN-LEAD - Quad NPN 40V 500mA BJT Array | Central Semiconductor
MPQ2222-TIN-LEAD ✓ АктивенCentral Semiconductor
MPQ2222 - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222 ✓ АктивенСравнение характеристик
| Параметр | MPQ2222-TIN-LEAD | MPQ2222 |
|---|---|---|
| Бренд | Central Semiconductor | Central Semiconductor |
| Категория | Transistors | Transistors |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,54 | $0,39 |
| Transistor Configuration | Quad (4 independent NPN) | — |
| Тип транзистора | NPN Bipolar Junction Transistor (BJT) | — |
| Напряжение коллектор-эмиттер (Vceo) | 40 V | — |
| Напряжение коллектор-база (Vcbo) | 60 V | [DATA_NEEDED: VCBO exact value, typically 60 V class per 2N2222 family - verify in datasheet] |
| Напряжение эмиттер-база (Vebo) | 5.0 V | [DATA_NEEDED: VEBO exact value] |
| Ток коллектора (Ic) | 500 mA | — |
| Power Dissipation | 650 mW | — |
| Граничная частота (ft) | 200 MHz | 200 MHz |
| Корпус | TO-116, 14-pin DIP, Through Hole | 14-pin DIP (TO-116), Through Hole |
| Тип монтажа | Through Hole | Through Hole |
| Plating Finish | Tin/Lead (order suffix TIN/LEAD) | — |
| Molding Compound | EMC GREEN, halogen-free | — |
| Application | General purpose amplifier and switching | — |
| Equivalent Base Type | Quad 2N2222-type | — |
| Статус RoHS | Non-compliant (lead-containing tin/lead plating variant) | Lead-free (PB Free suffix version available) |
| Configuration | — | Quad NPN Transistor Array (4 independent devices) |
| Transistor Polarity | — | NPN Silicon |
| Collector-Emitter Voltage Rating | — | 40 V |
| Continuous Collector Current (per device) | — | 500 mA |
| Power Dissipation (total package) | — | 650 mW |
| Power Dissipation (per transistor) | — | [DATA_NEEDED: per-transistor dissipation value] |
| DC Current Gain (hFE) | — | [DATA_NEEDED: hFE min/typ, higher in MPQ2222A grade] |
| Operating and Storage Junction Temperature | — | [DATA_NEEDED: exact TJ range from datasheet] |
| Thermal Resistance (total package) | — | [DATA_NEEDED: thermal resistance value] |
| Marking | — | Full part number |